CSD16322Q5C

$1.42

Description：MOSFET N-CH 25V 21A/97A 8SON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:311be28b67bb Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 25V 21A/97A 8SON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 8V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 4.5 V
Vgs (Max)：+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1365 pF @ 12.5 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SON
Package / Case：8-PowerTDFN

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CSD16322Q5C

Overview

The CSD16322Q5C is a NexFET DualCool N-Channel Power MOSFET featuring a SON 5x6mm package. It supports a drain-source voltage of 25V and continuous drain currents up to 97A at TC=25°C or 21A at TA=25°C. The device offers ultralow gate charge (6.8nC typ @ 4.5V) and low on-resistance ranging from 3.9mΩ to 7mΩ depending on gate drive. Thermal performance includes junction-to-case resistances of 3.5°C/W (top) and 2.4°C/W (bottom).

Feature Summary

DualCool Package with exposed top source and bottom drain for two-sided cooling.
Optimized for 5V gate drive applications with ultralow gate charge.
Avalanche rated for robust inductive switching performance.

Applications

Point-of-load synchronous buck converters
Networking, telecom, and computing systems

Procurement Notes

Verify the specific ordering suffix 'Q5C' matches the required DualCool SON 5x6mm plastic tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet documentation before finalizing procurement orders.

Selection Notes

Select this component for designs requiring efficient thermal dissipation through both the top source and bottom drain surfaces. The optimized gate charge characteristics make it suitable for high-frequency power conversion circuits operating with 5V logic-level gate drivers.

Part Context

This part belongs to Texas Instruments' NexFET family, utilizing advanced silicon technology to minimize conduction and switching losses. The DualCool architecture distinguishes it by providing dedicated thermal paths for enhanced heat transfer compared to standard surface-mount packages.

Replacement Considerations

Check pinout compatibility and thermal resistance specifications when substituting. Verify that alternative devices support the same 25V rating and dual-side cooling capabilities if the PCB layout relies on the specific DualCool thermal design.