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Product Detailed Parameters
- Description：MOSFET N-CH 25V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：4100 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16401Q5T is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VDS of 25V and a continuous drain current (Id) of 100A at Ta=25°C. The device exhibits a maximum Rds(on) of 1.3 mΩ at Vgs=8V. Key electrical parameters include a gate charge (Qg) of 21 nC, a threshold voltage (Vgs(th)) of 1.2V, and a forward transconductance of 168 S. It operates within a temperature range of -55°C to +150°C and utilizes an 8-VSON-CLIP package.
Feature Summary
- Utilizes NexFET technology for high-performance switching capabilities
- Features low on-resistance for efficient power management
- Designed with a compact surface-mount footprint
Applications
- Low-voltage DC-DC converter designs
- Power distribution networks in computing equipment
- Load switch applications requiring fast transient response
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing. Confirm the datasheet revision matches the required specifications. Ensure the supplier provides original manufacturer documentation to validate authenticity. Check RoHS compliance status as indicated in official product literature before finalizing procurement orders.
Selection Notes
Select this component for applications demanding high current handling in a small form factor. The 25V rating suits low-voltage systems. Evaluate thermal performance requirements against the specified power dissipation limits. Consider the gate charge characteristics for driving circuit compatibility in high-frequency switching environments.
Part Context
This part belongs to the CSD164xxQ5 series of NexFET MOSFETs from Texas Instruments. These devices are engineered for high efficiency and density in power conversion circuits. The Q5 designation typically refers to the specific generation of the NexFET platform optimized for low losses.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. Cross-reference with similar NexFET series parts if exact availability is constrained.
