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Product Detailed Parameters
- Description：MOSFET N-CH 30V 20A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1250 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17510Q5A is a 30V N-Channel NexFET™ Power MOSFET manufactured by Texas Instruments. It features an 8-pin VSONP (5mm x 6mm) surface-mount package with a maximum continuous drain current of 100A at case temperature and 20A at ambient temperature. The device exhibits a low on-resistance of 6.3mΩ, enabling efficient power management. Key electrical characteristics include a gate threshold voltage range of 0.9V to 1.6V, a maximum gate-source voltage of ±10V, and a total gate charge of 11.8nC at 4.5V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Combines vertical current flow with lateral power MOSFET architecture for optimized performance
- Engineered with extremely low gate charge and low thermal resistance
- Capable of withstanding avalanche energy conditions
Applications
- High-efficiency power conversion systems
- Power management circuits requiring low on-resistance
- Surface-mount applications in compact electronic designs
Procurement Notes
Verify the specific datasheet revision (e.g., Rev. H) when sourcing components to ensure alignment with final design parameters. Confirm that the 8-VSONP package dimensions match the PCB footprint requirements. Ensure that the operating environment remains within the specified -55°C to +150°C junction temperature limits to maintain device reliability and performance standards.
Selection Notes
Select this component for applications demanding high current handling capabilities in a small form factor. The low on-resistance and gate charge make it suitable for high-frequency switching operations where efficiency is critical. Consider the thermal dissipation capabilities provided by the exposed pad SON package when designing heat management solutions for the target system.
Part Context
This device belongs to the NexFET™ Power MOSFET family from Texas Instruments, which integrates advanced silicon technologies to reduce conduction and switching losses. The CSD17510Q5A specifically targets applications requiring robust performance in low-voltage, high-current environments, leveraging the company's expertise in power semiconductor design.
Replacement Considerations
Cross-reference with other NexFET devices in the same voltage class if pin compatibility or package constraints require substitution. Verify that any alternative part maintains equivalent on-resistance and gate charge specifications to ensure consistent circuit behavior.
