SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CSD17522Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a drain-source breakdown voltage of 30 V and an on-resistance of 8.1 mOhm. The device supports a continuous drain current of 87 A at case temperature and 3 W at ambient temperature. It is housed in an 8-PowerTDFN package with dimensions of 5 mm x 6 mm.
Verify the specific ordering suffix to ensure compatibility with required packaging and tape-and-reel specifications. Confirm that the component meets all relevant automotive or industrial qualification standards if applicable to your design. Cross-reference the datasheet revision date to ensure access to the latest electrical characteristics and thermal data before finalizing procurement orders.
Select this component when designing circuits requiring a 30 V rating with high current handling capabilities near 87 A. The low on-resistance makes it suitable for minimizing conduction losses in synchronous buck converters. Ensure the PCB layout supports the thermal requirements of the PowerTDFN package to maintain optimal junction temperatures during operation.
This part belongs to the CSD175xx series of NexFET power MOSFETs from Texas Instruments. The series offers various Rds(on) options within the same 30 V voltage class, allowing designers to balance cost and efficiency. The Q5A suffix typically denotes specific packaging and quality attributes defined by the manufacturer for mass production.
Potential substitutes include other 30 V N-channel MOSFETs from the same family, such as the CSD17578Q5A, provided they meet the required current and resistance specifications. Verify pinout compatibility and thermal performance before substituting.