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Product Detailed Parameters
- Description：MOSFET N-CH 30V 34A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：34A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：1.65V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7020 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 191W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17556Q5B is an N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 34 A at ambient temperature, scaling to 100 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 1.4 milliohms at 10 V gate drive with 40 A current. Key electrical parameters include a maximum gate charge (Qg) of 39 nC at 4.5 V, a threshold voltage (Vgs(th)) of 1.65 V at 250 µA, and an input capacitance (Ciss) of 7020 pF at 15 V. Power dissipation ratings are 3.1 W at ambient and 191 W at case temperatures. The component operates within a junction temperature range of -55°C to 150°C and utilizes an 8-VSON-CLIP package.
Feature Summary
- NexFET technology providing low gate charge for efficient switching performance
- Low on-resistance optimized for high-current applications
- Clip lead frame design enhancing thermal conductivity and heat dissipation
Applications
- DC-DC converter circuits
- Power management systems
- Load switch implementations
Procurement Notes
Verify the specific ordering suffix to ensure the correct tape and reel configuration matches your assembly requirements. Confirm that the RoHS status aligns with environmental compliance standards for your target market. Check the moisture sensitivity level and recommended reflow profile to prevent damage during surface mount processing. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Selection Notes
Select this component when a 30 V rating is sufficient and low conduction losses are critical. The high current capability supports compact designs requiring significant power handling in small footprints. Evaluate the thermal resistance characteristics against your system's cooling strategy. Compare the gate charge specifications against your driver capabilities to optimize switching speed and minimize losses.
Part Context
This part belongs to the CSD17556 series from Texas Instruments, designed as a single N-channel enhancement mode field-effect transistor. It is housed in an 8-PowerTDFN package variant known as 8-VSON-CLIP, which measures 5x6 mm. The series targets applications demanding high efficiency and robust performance in power conversion environments.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal performance metrics before replacing the original component.
