ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5070 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD18532Q5B is a single N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power conversion. It features a 60V drain-source voltage rating and a low on-resistance of 3.2 milliohms at room temperature. The device supports a continuous drain current of 100A at case temperature and handles up to 156W of power dissipation when mounted on a cold plate. Packaged in an 8-pin VSON (5x6mm) footprint, it integrates advanced silicon technology to minimize conduction losses while maintaining robust thermal performance for demanding applications.
Feature Summary
- NexFET technology delivers ultra-low on-resistance for enhanced efficiency
- Optimized surface-mount package facilitates automated assembly
- Enhanced thermal design supports high-power density environments
Applications
- Point-of-load DC-DC converters
- Synchronous rectification stages
- High-frequency power supplies
Procurement Notes
Verify the specific ordering suffix to confirm tape and reel specifications. Ensure compatibility with standard reflow soldering profiles defined in the datasheet. Confirm RoHS compliance status through official manufacturer documentation before integration into regulated products.
Selection Notes
Select this component when a 60V rating and sub-4 milliohm resistance are required. Evaluate thermal management requirements against the specified junction-to-case characteristics. Compare gate charge parameters against switching frequency targets to optimize driver design.
Part Context
This part belongs to the CSD185xxQ5B series of NexFET power MOSFETs. The series utilizes Texas Instruments' proprietary silicon process to achieve superior figure-of-merit values compared to conventional planar technologies. These devices are engineered specifically for modern synchronous buck converter architectures requiring compact footprints.
Replacement Considerations
Direct substitutes within the same family include CSD18537Q5B and CSD18540Q5B. Verify pinout compatibility and ensure electrical ratings meet or exceed original design specifications before substitution.
