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Product Detailed Parameters
- Description：MOSFET N-CH 80V 100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：9.2mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2730 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：188W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD19503KCS is an N-channel enhancement-mode power MOSFET from the NexFET family, manufactured by Texas Instruments. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 100 A. The device exhibits a typical on-resistance (Rds(on)) of 2.8 mΩ at Vgs = 10 V. Packaged in a TO-220-3 through-hole case, it supports a power dissipation of 188 W and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- NexFET technology optimized for low gate charge and fast switching performance
- Enhanced dynamic dv/dt immunity to prevent false turn-on
- Robust avalanche energy rating for reliable operation in inductive loads
Applications
- DC-DC converter modules
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the specific suffix KCS to confirm the tube packaging format. Ensure the ordering part number matches the exact electrical specifications required for the target circuit design. Cross-reference with the official Texas Instruments datasheet to confirm RoHS compliance status and lead times before finalizing procurement plans.
Selection Notes
Select this component when an 80 V N-channel MOSFET with high current capability is required in a through-hole package. Compare Rds(on) and gate charge values against alternative devices to ensure compatibility with existing gate drive capabilities and thermal management constraints in the application design.
Part Context
This device belongs to the CSD195xx series of NexFET power MOSFETs. These components are designed for high-efficiency power conversion applications requiring low conduction losses and robust switching characteristics. The TO-220-3 package facilitates easy integration into standard PCB layouts and heatsinking solutions.
Replacement Considerations
Direct substitutes include other 80 V N-channel NexFET MOSFETs in TO-220 packages from Texas Instruments, such as the CSD19506KCS or CSD19535KCS, provided their voltage and current ratings meet or exceed the original requirements.
