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Product Detailed Parameters
- Description：MOSFET P-CH 12V 2.2A 4DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：82mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：325 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-DSBGA (1x1)
- Package / Case：4-UFBGA, DSBGA
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Overview
The CSD23201W10 is a P-channel NexFET Power MOSFET designed for ultra-low resistance and gate charge in a compact footprint. It features a –12 V drain-to-source voltage rating and a continuous drain current of –2.2 A at 25°C case temperature. The device offers an on-resistance (RDS(on)) as low as 66 mΩ at VGS = –4.5V. Key dynamic parameters include a total gate charge (Qg) of 1.8 nC and a gate-to-drain charge (Qgd) of 0.26 nC. It operates within a junction temperature range of –55°C to +150°C and utilizes a 1mm × 1mm wafer-level CSP package.
Feature Summary
- Ultra-low gate charge (Qg) and gate-to-drain charge (Qgd) for efficient switching performance
- Small 1mm × 1mm footprint with a low profile height of 0.62mm
- Integrated gate ESD protection rated at 3kV
- RoHS compliant and halogen-free construction
Applications
- Battery management systems
- Load switch applications
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix and media quantity against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS compliance requirements for your target market. Ensure that handling procedures account for the limited built-in ESD protection by using conductive foam or shorting leads during storage and assembly to prevent electrostatic damage to the MOS gates.
Selection Notes
Select this component when minimizing board space is critical due to its 1mm x 1mm wafer-level package. It is suitable for applications requiring fast switching speeds, indicated by low Qg and Qgd values. Consider the thermal resistance characteristics and maximum power dissipation limits relative to your PCB copper area. Verify that the required gate drive voltage aligns with the specified RDS(on) performance curves for optimal efficiency.
Part Context
This part belongs to Texas Instruments' NexFET family of power MOSFETs, which are engineered to deliver low on-resistance and gate charge. The CSD23201W10 specifically targets portable and battery-powered devices where size constraints and power efficiency are paramount. It serves as a single-channel solution for managing power flow in compact electronic designs.
Replacement Considerations
Consult the manufacturer's product folder for officially confirmed substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without verifying pinout compatibility and package dimensions.
