CSD23381F4

$0.20

Description：MOSFET P-CH 12V 2.3A 3PICOSTAR
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:62253f4f1fb9 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 2.3A 3PICOSTAR
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：175mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.14 nC @ 4.5 V
Vgs (Max)：-8V
Input Capacitance (Ciss) (Max) @ Vds：236 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：3-PICOSTAR
Package / Case：3-XFDFN

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CSD23381F4

Overview

The CSD23381F4 is a single-channel P-Channel enhancement mode MOSFET from the NexFET family, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package with dimensions of 1 mm length, 0.64 mm width, and 0.35 mm height. Key electrical specifications include a drain-source breakdown voltage (Vds) of 12 V, a continuous drain current (Id) of 2.3 A, and a maximum on-resistance (Rds On) of 175 mOhms. The device operates within a temperature range of -55 °C to +150 °C, features a gate-source voltage rating of ±8 V, a threshold voltage of 700 mV, and a total gate charge of 1.14 nC.

Feature Summary

NexFET technology optimized for low on-resistance and fast switching performance
Enhancement mode P-Channel configuration for high-side load switching applications
PICOSTAR-3 compact surface-mount package design

Applications

DC-DC converter output rectification
Low-voltage power management circuits
Battery protection modules

Procurement Notes

Verify the specific ordering suffix 'F4' to confirm the tape-and-reel packaging format required for automated assembly processes. Ensure that the procurement documentation explicitly references the Texas Instruments manufacturer identifier to distinguish genuine components from potential counterfeits. Cross-reference the RoHS compliance status with the latest official datasheet revision to meet environmental regulatory standards for your target market.

Selection Notes

Select this component when a 12 V rated P-Channel MOSFET is required for space-constrained designs due to its small PICOSTAR-3 footprint. The 175 mOhm on-resistance at 2.3 A makes it suitable for moderate current applications where efficiency is critical. Consider the 1.14 nC gate charge for driving capabilities and the wide operating temperature range for industrial environments.

Part Context

This part belongs to the CSD2338xF4 series of NexFET power MOSFETs. It shares the same PICOSTAR-3 package form factor as other members like the CSD23382F4 but differs in channel type and voltage ratings. The series is designed to provide improved thermal performance and switching speed compared to legacy discrete packages.