CSD25201W15

Overview

The CSD25201W15 is a P-Channel NexFET Power MOSFET designed for battery-operated, space-constrained applications. It features a wafer level package with dimensions of 1.5 mm x 1.5 mm. Key electrical parameters include a drain-to-source voltage (BVDSS) of -20 V and a continuous drain current (ID) of 4 A. The device offers low on-state resistance (RDS(on)) ranging from 33 mΩ to 52 mΩ depending on gate drive conditions. Total gate charge (Qg) is specified at 4.3 nC typical. Thermal performance includes a junction-to-ambient thermal resistance (RθJA) of 185 °C/W on a minimum copper footprint.

Feature Summary

• Ultra-low profile design with a small 1.5-mm × 1.5-mm footprint suitable for space-constrained environments.
• Integrated gate ESD protection rated at -3 kV and a built-in gate-source voltage clamp.
• Optimized for lowest absolute on-resistance and gate charge within the smallest outline possible.
• Excellent thermal characteristics ensuring efficient operation in battery management systems.

Applications

• Battery Management Systems
• Battery Protection Circuits

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm the package type matches the required wafer level form factor. Ensure the ordering suffix corresponds to the correct media quantity and reel configuration. Cross-reference the RoHS compliance status with current environmental regulations before finalizing procurement orders.

Selection Notes

Select this component when minimizing board area is critical due to its ultra-small outline. Evaluate the RDS(on) values against the specific gate drive voltage available in the system to ensure adequate current handling. Consider the thermal resistance requirements based on the expected copper footprint area. Verify that the -20 V rating aligns with the maximum operating voltage of the target application.

Part Context

This device belongs to Texas Instruments' NexFET Power MOSFET family, which focuses on delivering high performance in compact packages. The CSD25201W15 utilizes silicon technology optimized for low resistance and fast switching speeds. It is part of a series designed specifically for portable electronics and battery-powered devices where size and efficiency are paramount constraints.

Replacement Considerations

Consult the manufacturer's datasheet for similar part numbers within the same NexFET series. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure any replacement maintains the required wafer level package dimensions and thermal characteristics.