CSD86360Q5D

CSD86360Q5D

$1.96
  • Description:MOSFET 2N-CH 25V 50A 8LSON
  • Series:NexFET™

SKU:aebedb573b2a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 25V 50A 8LSON
  • Series:NexFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:50A
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:2060pF @ 12.5
  • Power - Max:13W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerLDFN
  • Supplier Device Package:8-LSON (5x6)
  • Grade:-
  • Qualification:-

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CSD86360Q5D

Overview

The CSD86360Q5D is a synchronous buck NexFET power module designed for high-efficiency DC-DC conversion. It integrates half-bridge power switches in a compact 5mm x 6mm SON package. The device supports input voltages up to 22V and delivers output currents up to 50A. It operates at switching frequencies ranging from 200kHz to 1.5MHz, enabling reduced external component size. Absolute maximum ratings include a 25V VIN to PGND voltage and a 120A pulsed current capability. The module features optimized 5V gate drive compatibility and low parasitic inductance for improved switching performance.

Feature Summary

  • Integrated half-bridge power module providing efficient power conversion solutions
  • High system efficiency reaching 91% under specified load conditions
  • Supports high-frequency operation up to 1.5MHz to minimize passive component footprint
  • Ultra-low inductance package design enhances switching characteristics

Applications

  • Synchronous buck converters
  • Multi-phase synchronous buck converters
  • Point-of-load (POL) DC-DC converters
  • IMVP, VRM, and VRD applications

Procurement Notes

Verify the specific manufacturer datasheet for absolute maximum ratings and thermal resistance values before integration. Confirm that the operating junction temperature remains within the recommended range of -55°C to 150°C. Ensure the gate drive voltage stays between 4.5V and 8V for proper functionality. Check for RoHS compliance and lead-free pin plating requirements if applicable to your manufacturing process.

Selection Notes

Select this component when space constraints require a compact 5mm x 6mm footprint with high current handling capabilities. It is suitable for designs requiring switching frequencies up to 1.5MHz to reduce inductor and capacitor sizes. Verify that the application input voltage does not exceed 22V and that the required output current aligns with the 50A maximum rating. Consider thermal management strategies based on the specific copper area available on the PCB.

Part Context

This part belongs to the NexFET power module family from Texas Instruments, specifically optimized for synchronous buck applications. It combines control FETs and synchronous FETs into a single integrated package. The technology focuses on reducing system size and improving efficiency through low switch losses and optimized gate drive integration compared to discrete MOSFET solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on similar package dimensions (5x6mm), voltage ratings (25V), and current capabilities (50A). Ensure any replacement maintains compatible gate drive voltage ranges and switching frequency specifications.

CSD86360Q5DCSD86360Q5D
$1.96
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