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CSDD-12N TR13
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Product Detailed Parameters
- Description：SCR 800V 12A D2PAK
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Voltage - Off State：800 V
- Voltage - Gate Trigger (Vgt) (Max)：1.5 V
- Current - Gate Trigger (Igt) (Max)：15 mA
- Current - Hold (Ih) (Max)：20 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：110A @ 60Hz
- SCR Type：Sensitive Gate
- Operating Temperature：-40°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Voltage - On State (Vtm) (Max)：1.6 V
- Current - On State (It (AV)) (Max)：24 A
- Current - On State (It (RMS)) (Max)：12:00 AM
- Current - Off State (Max)：10 µA
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Overview
The Central Semiconductor CSDD-12N TR13 PBFREE is a surface mount silicon controlled rectifier in the D2PAK case. It features an 800 V peak repetitive off-state voltage and a 12 A RMS on-state current at 90°C case temperature. The device supports a 110 A one-cycle surge current with a critical di/dt of 100 A/μs. Electrical characteristics include a gate trigger current of 3.5 to 15 mA and a holding current of 8.7 to 20 mA. Thermal resistance values are 60 °C/W junction-to-ambient and 2.5 °C/W junction-to-case.
Feature Summary
- Epoxy molded construction designed for sensing circuit applications and control systems
- Surface mount D2PAK package configuration with specific lead assignments for cathode, anode, and gate
Applications
- Sensing circuit applications
- Control systems
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status via the datasheet documentation. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.
Selection Notes
Select this component based on the required 800 V blocking voltage and 12 A continuous current capability. Evaluate thermal management requirements against the specified junction-to-ambient resistance. Verify that the gate drive parameters align with the specified trigger current and voltage limits.
Part Context
This part belongs to the CSDD series of surface mount silicon controlled rectifiers manufactured by Central Semiconductor Corp. The series includes variants with different voltage ratings, such as the 600 V CSDD-12M model. All devices in the DPAK and D2PAK packages have been transitioned to End of Life status.
Replacement Considerations
No replacement products are available from the manufacturer. Stock only options exist for other series parts like CQD-4M. Contact [email protected] for assistance locating alternate sources.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +125 °C.
What is the peak forward gate power dissipation?
The peak forward gate power dissipation is 40 W for a pulse width of 10 μs.
What is the dv/dt rating at elevated temperatures?
The critical rate of rise of off-state voltage (dv/dt) is 200 V/μs when the case temperature is 125 °C.
