SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CTA2N1P-7-F is a complex transistor array in an SOT-363 package, combining an MMBT4401 NPN bipolar junction transistor and a BSS84 P-channel MOSFET. The NPN element provides a collector-emitter voltage of 40 V, continuous collector current up to 600 mA, and a gain-bandwidth product of 250 MHz. The P-channel MOSFET offers a drain-source voltage of -50 V, gate-source voltage of ±20 V, and static on-resistance of 10 Ω at -5V gate drive. Total device power dissipation is rated at 150 mW with an operating temperature range from -55°C to +150°C.
This part number is officially marked as obsolete and discontinued by the manufacturer. Verify availability through authorized distributors or secondary markets, noting that lead times may be extended or stock limited. Confirm the specific revision and date code upon receipt to ensure compliance with project requirements before finalizing procurement plans.
Select this component when space-constrained designs require both NPN and P-channel switching elements. Ensure the application operates within the specified 150 mW total power dissipation limit. Consider the thermal resistance of 833 °C/W and verify adequate PCB pad layout for heat dissipation during operation.
Manufactured by Diodes Incorporated, this device belongs to their complex transistor array series. It utilizes molded plastic packaging with UL flammability classification 94V-0. The component is lead-free and RoHS compliant, featuring matte tin plating over an Alloy 42 leadframe for terminal connections.
The datasheet identifies the CTA2P1N as the available PNP/N-Channel complement variant. No other direct substitute part numbers are documented in the official specifications.