CTLM3474-M832D TR

CTLM3474-M832D TR

  • Description:TRANS NPN/PNP 25V 1A TLM832D
  • Series:-

SKU:e6e7dae4587e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN/PNP 25V 1A TLM832D
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):25V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 1V
  • Power - Max:1.65W
  • Frequency - Transition:100MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TDFN Exposed Pad
  • Supplier Device Package:TLM832D
  • Grade:-
  • Qualification:-

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CTLM3474-M832D TR

Overview

The CTLM3474-M832D TR is a complementary dual silicon transistor manufactured by Central Semiconductor Corp, featuring one NPN and one PNP device within a single TLM832D surface mount package. The NPN transistor supports a collector-emitter voltage (VCEO) of 25 V and a continuous collector current (IC) of 1.0 A, while the PNP transistor provides a collector-base voltage (VCBO) of 40 V and an emitter-base voltage (VEBO) of 6.0 V. Both transistors share a maximum power dissipation rating of 1.65 W at 25°C ambient temperature with a thermal resistance (ΘJA) of 76 °C/W. The junction operating and storage temperature range extends from -65°C to +150°C.

Feature Summary

  • Complementary dual configuration integrating both NPN and PNP transistors in a single leadless module
  • High current capability supporting up to 1.0 A continuous collector current per transistor
  • Low saturation voltage characteristics designed for operational efficiency and low energy consumption
  • Thermally efficient small footprint package providing high power density relative to surface area

Applications

  • Switching circuits requiring compact form factors
  • DC-DC converter designs
  • LCD backlighting driver applications
  • Battery-powered and portable equipment such as cell phones, digital cameras, pagers, PDAs, and notebook PCs

Procurement Notes

Verify the specific ordering suffix required for plating specifications when placing orders. The manufacturer offers distinct plating options including Lead-Free and Tin/Lead variants. Confirm that the requested suffix matches the exact electrical and environmental requirements of the design to ensure compliance with project standards and regulatory constraints.

Selection Notes

Select this component for designs prioritizing space efficiency and thermal performance in surface mount layouts. The TLM832D case allows for higher power dissipation compared to similar packages due to its leadless construction. Ensure adequate copper mounting pad areas on the PCB are utilized to achieve the specified thermal resistance and power handling capabilities under operating conditions.

Part Context

This part belongs to the CTLM series of dual, low VCE(sat) silicon transistors produced by Central Semiconductor Corp. It shares the same TLM832D package and general electrical architecture with the CTLM3410-M832D (Dual NPN) and CTLM7410-M832D (Dual PNP). The marking code CFJ identifies this specific complementary variant within the product family.

Replacement Considerations

The official End-of-Life notice lists no direct replacement part numbers for the CTLM3474-M832D. Engineering support may be contacted for alternate sourcing assistance if standard replacements are unavailable.

CTLM3474-M832D TRCTLM3474-M832D TR

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