CTLM7110-M832D BK

Description：TRANSISTOR
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:8bc675047cb3 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：250mOhm @ 100mA, 1.5V
Vgs(th) (Max) @ Id：1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 10 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.65W (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TLM832D
Package / Case：8-TDFN Exposed Pad

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CTLM7110-M832D BK

Overview

The CTLM7110-M832D is a Multi Discrete Module containing an N-Channel Enhancement-mode Silicon MOSFET and a Low VF Silicon Schottky Rectifier. It is housed in a leadless 3x2mm surface mount case (TLM832D). The MOSFET provides a drain-source voltage of 20V, continuous drain current of 1.0A, and maximum on-resistance of 0.25Ω at VGS=1.5V. The Schottky rectifier offers a peak repetitive reverse voltage of 40V and continuous forward current of 1.0A with a maximum forward voltage of 550mV at 1.0A.

Feature Summary

Dual chip device integrating an N-channel MOSFET and a low forward voltage Schottky rectifier
Small thermally efficient leadless surface mount package designed for operational efficiency
ESD protection capability up to 2KV

Applications

Load power switches
DC-DC converters
LCD backlighting
Battery powered portable devices including cell phones and digital cameras

Procurement Notes

Verify the specific ordering suffix required for plating type when purchasing. Add 'TIN/LEAD' for tin/lead plated devices or 'PBFREE' for lead-free plated devices. Confirm availability status as this component may be subject to discontinuation notices from the manufacturer.

Selection Notes

Select this module for designs requiring compact size and low energy consumption. Ensure the circuit operates within the specified junction temperature range of -65°C to +150°C. Verify that the gate drive voltage meets the requirements for the desired on-resistance performance level.

Part Context

This component belongs to Central Semiconductor's Multi Discrete Module series. It is designed to replace discrete components in space-constrained applications. The complementary P-channel device is the CTLM8110-M832D.