CY14U256LA-BA35XI

Memory IC Overview

The CY14U256LA-BA35XI is a 256-Kbit (32 K × 8) nonvolatile static RAM utilizing QuantumTrap technology. It features a 35 ns access time and operates with a core voltage of 2.7 V to 3.6 V and I/O voltage of 1.65 V to 1.95 V. The device supports infinite read/write cycles, up to 1 million STORE cycles, and 20-year data retention. It includes automatic STORE on power down via a VCAP capacitor, hardware STORE via the HSB pin, and software-controlled STORE/RECALL sequences. The component is housed in a 48-ball FBGA package and rated for industrial temperatures from -40 °C to +85 °C.

Memory IC Feature Summary

• Integrates SRAM with QuantumTrap nonvolatile elements for infinite read/write endurance and high reliability.
• Supports automatic STORE on power down using an external capacitor connected to the VCAP pin.
• Enables hardware STORE initiation and busy status monitoring through the dedicated HSB pin.
• Provides software-controlled STORE and RECALL operations via specific address sequences.

Memory IC Applications

• Industrial control systems requiring persistent memory
• Data logging applications needing frequent write cycles
• Embedded systems with limited power supply stability

Memory IC Procurement Notes

Verify that the ordering part number matches the required speed grade and package configuration. Confirm that the system design accommodates the specified VCC and VCCQ voltage ranges. Ensure the VCAP pin connection utilizes a capacitor within the recommended range to support AutoStore functionality. Check for RoHS compliance documentation if required by local regulations.

Memory IC Selection Notes

Select this component when infinite SRAM write endurance is required alongside nonvolatile data retention. Consider the dual-voltage requirement for core and I/O supplies during system architecture planning. Evaluate the need for automatic power-down storage versus software-controlled storage based on application complexity. Ensure the 48-ball FBGA package fits the available PCB space and manufacturing capabilities.

Memory IC Part Context

This nvSRAM combines the speed of static RAM with the persistence of nonvolatile memory. It eliminates the need for battery backup or complex refresh circuits found in other nonvolatile technologies. The QuantumTrap cell structure provides robust data retention without the wear-out mechanisms typical of flash memory. It serves as a drop-in replacement for standard SRAM in applications where data loss during power interruptions is unacceptable.

Memory IC Replacement Considerations

Check datasheets for alternative density levels or package options within the CY14U256LA family. Verify compatibility of voltage levels and interface signals before substituting with different manufacturers' nvSRAM products.

Memory IC FAQ

How is the AutoStore function disabled?

AutoStore is disabled by executing a specific sequence of six CE-controlled read operations from addresses 0x0E38, 0x31C7, 0x03E0, 0x3C1F, 0x303F, and 0x0B45.

What happens if no capacitor is connected to the VCAP pin?

If AutoStore is enabled without a capacitor, the device may attempt an AutoStore operation without sufficient charge, potentially corrupting stored data. In this case, AutoStore must be disabled via the software sequence.

How does the HSB pin indicate device status?

The HSB pin is driven LOW to indicate that a STORE operation is in progress. After completion, it is driven HIGH briefly and then held HIGH by an internal weak pull-up resistor.