CY15B101N-ZS60XE

Memory IC Overview

The CY15B101N-ZS60XE is a 1-Mbit (64K × 16) Automotive-E F-RAM memory in a 44-pin TSOP II package. It operates at 2.0 V to 3.6 V with a 60 ns access time and 90 ns cycle time. The device supports page-mode operation for 30 ns cycle times and features NoDelay writes. Endurance reaches 10^13 cycles, with data retention of 121 years at 85 °C. Active current is typically 7 mA, standby current 120 µA at 25 °C, and sleep mode current 35 µA.

Memory IC Feature Summary

• Provides immediate nonvolatile storage through NoDelay write technology without write latency.
• Functions as a drop-in replacement for standard asynchronous SRAMs using industry-standard pinouts.
• Supports high-speed sequential access via page-mode operations for rapid row-based data retrieval.
• Operates within the Automotive-E temperature range while maintaining superior reliability against shock and vibration.

Memory IC Applications

• Automotive electronic systems requiring frequent data logging
• Industrial control applications needing high endurance
• Battery-backed SRAM replacements in space-constrained designs

Memory IC Procurement Notes

Verify the specific ordering suffix ZS60XE confirms the 44-pin TSOP II package and lead-free status. Ensure the Automotive-E grade designation matches the required -40 °C to +125 °C operating range. Confirm RoHS compliance requirements are met by the Pb-free construction. Check for tape and reel availability if automated assembly is planned.

Memory IC Selection Notes

Select this component when system design requires true nonvolatility without battery maintenance or rework steps. Choose this part for applications demanding high write endurance exceeding traditional EEPROM capabilities. Consider this device for designs needing fast random access speeds comparable to SRAM while retaining data during power loss.

Memory IC Part Context

This component belongs to the Cypress Semiconductor F-RAM family, now under Infineon Technologies. It utilizes ferroelectric memory technology to combine the speed of RAM with nonvolatile data retention. The Automotive-E grade ensures qualification for harsh automotive environments, distinguishing it from commercial-grade variants.

Memory IC Replacement Considerations

Direct drop-in replacement for standard 64K x 16 asynchronous SRAMs. Verify that the host system does not assert both Chip Enable and Write Enable low simultaneously during power-up or power-down events to prevent data corruption.

Memory IC FAQ

How does the device handle write operations compared to EEPROM?

Unlike EEPROM, the CY15B101N has no write delay. Data is stored immediately upon the rising edge of the Write Enable signal, eliminating the need for data polling techniques.

What is the function of the ZZ pin?

The ZZ pin controls the Sleep Mode. Asserting it LOW enters the lowest-power supply current condition, while keeping it HIGH allows normal read/write operations.

Can the device be configured as an 8-bit memory?

Yes, by utilizing the Upper Byte (UB) and Lower Byte (LB) select pins, the 64K x 16 array can be logically organized as 128K x 8.