CY62167G18-55BVXI

Memory IC Overview

The CY62167G18-55BVXI is a 16-Mbit (1M words × 16-bit) asynchronous static RAM from the MoBL SRAM family. It operates within a voltage range of 1.65 V to 2.2 V and features a 55 ns access time. The device is housed in a 48-ball VFBGA package with Sn/Ag/Cu ball surfaces. It supports industrial temperature grades ranging from -40 °C to +85 °C.

Memory IC Feature Summary

• Embedded error-correcting code for single-bit error correction
• Ultra-low standby current consumption
• Configurable byte power-down feature
• TTL compatible inputs and outputs

Memory IC Applications

• Industrial control systems requiring low power
• Battery-backed memory applications
• Data logging equipment
• Portable electronic devices

Memory IC Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance and lead finish specifications prior to integration. Ensure proper ESD handling procedures are followed during assembly. Check for end-of-life notifications as discontinuation status may affect long-term supply availability.

Memory IC Selection Notes

Select this part for designs requiring low-voltage operation between 1.65 V and 2.2 V. The embedded ECC provides data integrity without external logic. Consider the VFBGA package for space-constrained PCB layouts. Verify thermal management requirements for the specific operating environment.

Memory IC Part Context

This component belongs to the Cypress Semiconductor MoBL SRAM portfolio, now managed by Infineon Technologies. It represents a high-density, low-power solution designed for mobile and industrial applications where power efficiency and data reliability are critical design constraints.

Memory IC Replacement Considerations

CY62167GE18-55BVXI includes an ERR pin for error indication.