CY7C1041GE30-10VXIT

Memory IC Overview

The CY7C1041GE30-10VXIT is a 4-Mbit (256K words × 16-bit) asynchronous static RAM featuring embedded Error-Correcting Code for single-bit error correction. It operates within a voltage range of 2.2 V to 3.6 V with a typical active current of 38 mA and standby current of 6 mA. The device provides a 10 ns access time and includes an ERR pin to signal detected errors. It utilizes TTL-compatible inputs and outputs, supports 1.0-V data retention, and is housed in a 48-ball VFBGA package.

Memory IC Feature Summary

• Embedded ECC logic corrects single-bit errors during read cycles
• Dedicated ERR output pin signals error detection and correction events
• TTL-compatible input and output levels for broad interface compatibility
• Supports 1.0-V data retention for power-down protection

Memory IC Applications

• Industrial systems requiring high reliability memory
• Data acquisition systems needing error correction
• Embedded control applications with strict voltage constraints
• Automotive electronics operating in industrial temperature ranges

Memory IC Procurement Notes

Verify the specific ordering suffix 'BVXIT' confirms the 48-ball VFBGA package and tape-and-reel shipping format. Ensure the 'E' designation is present to confirm the inclusion of the ERR output pin required for error monitoring. Confirm the '30' suffix matches the 2.2 V to 3.6 V operating voltage range. Check for RoHS compliance status as per the latest manufacturer documentation.

Memory IC Selection Notes

Select this component when single-bit error correction is mandatory for data integrity. The 2.2 V to 3.6 V supply range suits mid-voltage logic families. The ERR pin allows system-level fault handling. Compare against CY7C1041G variants if error indication is not needed. Consider thermal resistance values for PCB layout planning in enclosed industrial enclosures.

Memory IC Part Context

This part belongs to the CY7C1041 family of fast asynchronous SRAMs developed by Cypress Semiconductor, now part of Infineon Technologies. The GE variant specifically adds the error reporting capability compared to the standard G series. It represents a 65 nm process technology node designed for robust performance in industrial environments.

Memory IC Replacement Considerations

CY7C1041GE30-10BVXI serves as a bulk-pack alternative with identical electrical characteristics. CY7C1041G30-10VXIT offers the same speed and voltage but lacks the ERR pin functionality. Verify package pinout compatibility before substituting.