CY7C1041GN30-10BVXIT

CY7C1041GN30-10BVXIT

$5.92
  • Description:IC SRAM 4MBIT PARALLEL 48VFBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b4e29f8b26b5 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 48VFBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.2V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-VFBGA
  • Supplier Device Package:48-VFBGA (6x8)
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

Download product information

CY7C1041GN30-10BVXIT

Overview

The CY7C1041GN30-10BVXIT is a 4-Mbit (256K words × 16 bit) fast asynchronous static RAM manufactured by Infineon Technologies. It operates within a voltage range of 2.2 V to 3.6 V and features a typical access time of 10 ns. The device utilizes a 48-ball VFBGA package with dimensions of 6 × 8 × 1.0 mm. It supports industrial operating temperatures from -40 °C to +85 °C and includes TTL-compatible inputs and outputs.

Feature Summary

  • Supports byte-level write operations via dedicated BHE and BLE control signals for upper and lower data bytes.
  • Maintains data integrity during power loss through a low-voltage retention mode at 1.0 V.
  • Features high-speed parallel interface with independent chip, output enable, and write enable controls.

Applications

  • High-performance embedded memory systems requiring fast random access
  • Industrial control units operating in wide temperature ranges
  • Network equipment utilizing TTL-compatible logic interfaces

Procurement Notes

Verify the 'T' suffix confirms Tape & Reel packaging rather than bulk tray delivery. Confirm the '30' designation matches the required 2.2 V to 3.6 V supply voltage range. Ensure the BVXI package ID aligns with the specific pinout requirements of the target PCB layout.

Selection Notes

Select this component when a 16-bit data width and 10 ns speed are required within the specified voltage window. Consider the VFBGA footprint constraints and thermal resistance characteristics for the application environment. Verify compatibility with existing system timing parameters regarding address and data setup/hold times.

Part Context

This part belongs to the CY7C1041GN family of 4-Mbit SRAMs. It shares architectural similarities with other variants differing primarily in voltage ranges and package types. The GN revision indicates 65 nm process technology. It serves as a direct replacement for legacy Cypress Semiconductor designs now managed under the Infineon portfolio.

Replacement Considerations

CY7C1041GN30-10BVXI is the identical functional equivalent packaged in trays instead of tape and reel.

CY7C1041GN30-10BVXITCY7C1041GN30-10BVXIT
$5.92
Buy Now