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CY7C1061G30-10BV1XE is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 16MBIT PARALLEL 48VFBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for CY7C1061G30-10BV1XE
- Description：IC SRAM 16MBIT PARALLEL 48VFBGA
- Series：-
- Mfr：Infineon Technologies
- Package：Tray,Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：16Mbit
- Memory Organization：1M x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：10ns
- Voltage - Supply：2.2V ~ 3.6V
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：48-VFBGA
- Supplier Device Package：48-VFBGA (6x8)
- Access Time：10 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for CY7C1061G30-10BV1XE
Memory IC Overview
The CY7C1061G30-10BV1XE is a 16-Mbit (1 M words × 16 bit) fast asynchronous static RAM with embedded error-correcting code. It operates within a voltage range of 2.2 V to 3.6 V and supports an access time of 10 ns. The device features single-bit error correction during read cycles, low active current of 90 mA typical at 100 MHz, and standby current of 20 mA typical. It maintains data retention down to 1.0 V and functions across an automotive temperature range of –40 °C to +125 °C.
Memory IC Feature Summary
- Embedded ECC logic for detecting and correcting single-bit errors in read data words
- Automotive-E qualification supporting extended high-temperature operation up to 125 °C
- Data retention capability maintained at supply voltages as low as 1.0 V
- TTL-compatible inputs and outputs for broad system integration
Memory IC Applications
- Automotive electronic control units requiring high reliability
- Industrial systems operating under extreme thermal conditions
- High-speed memory buffers utilizing ECC protection
Memory IC Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel configuration. Ensure the component meets Automotive-E grade requirements for your target application environment. Cross-reference datasheet revisions to validate electrical characteristics and timing parameters before finalizing procurement specifications.
Memory IC Selection Notes
Select this component when designing systems that require robust memory integrity through hardware-based error correction. It is suitable for applications demanding wide voltage tolerance and extended industrial or automotive temperature ranges. Consider the 48-ball VFBGA package for compact surface-mount designs.
Memory IC Part Context
This part belongs to the CY7C1061G family of 16-Mbit Fast Asynchronous SRAMs manufactured using 65 nm CMOS technology. The 'G' revision indicates the specific process technology generation. The device integrates ECC capabilities directly into the memory array architecture to enhance data reliability without external processing overhead.
Memory IC Replacement Considerations
CY7C1061G30-10BV1XET
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