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CY7C1061GE18-15BVXI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 16MBIT PARALLEL 48VFBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for CY7C1061GE18-15BVXI
- Description：IC SRAM 16MBIT PARALLEL 48VFBGA
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：16Mbit
- Memory Organization：1M x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：15ns
- Voltage - Supply：1.65V ~ 2.2V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：48-VFBGA
- Supplier Device Package：48-VFBGA (6x8)
- Access Time：15 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for CY7C1061GE18-15BVXI
Memory IC Overview
The CY7C1061GE18-15BVXI is a 16-Mbit (1M words × 16-bit) asynchronous static RAM manufactured by Infineon Technologies. It features embedded error-correcting code (ECC) for single-bit error correction and an ERR pin to signal detected errors. The device operates within a voltage range of 1.65 V to 2.2 V and supports a maximum access time of 15 ns. It utilizes a parallel interface and is housed in a 48-ball VFBGA package with dual chip enable inputs.
Memory IC Feature Summary
- Embedded ECC logic provides automatic single-bit error detection and correction during read cycles.
- ERR output pin signals the assertion state when a single-bit error is corrected.
- Supports dual chip enable configuration for flexible system integration.
Memory IC Applications
- Network and communication equipment requiring data integrity
- Industrial control systems operating at low voltages
- High-speed memory buffers with error monitoring needs
Memory IC Procurement Notes
Verify the specific ordering suffix BVXI confirms the 48-ball VFBGA package, dual chip enable configuration, and industrial temperature grade. Ensure the 'E' designation is present to confirm the inclusion of the ERR pin functionality. Cross-reference the datasheet revision to confirm compatibility with current manufacturing processes.
Memory IC Selection Notes
Select this component when a 16-Mbit capacity with 15 ns speed is required alongside hardware-level ECC capabilities. The 1.65 V to 2.2 V supply range makes it suitable for low-power applications. Verify that the dual chip enable architecture aligns with the target system's control logic requirements.
Memory IC Part Context
This part belongs to the CY7C1061G/CY7C1061GE family of fast asynchronous SRAMs. The 'GE' variant specifically includes the ERR pin for error indication, distinguishing it from the standard 'G' series. It is designed for high-reliability applications where data corruption must be actively managed.
Memory IC Replacement Considerations
CY7C1061G18-15BVXI lacks the ERR pin but shares identical electrical characteristics and pinout except for the ERR ball assignment.
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