CY7C109BN-12ZXCT

Memory IC Overview

The CY7C109BN-12ZXCT is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. It features a maximum access time of 12 ns and operates within a supply voltage range of 4.5 V to 5.5 V. The device supports an industrial operating temperature range from -40 °C to +85 °C. Maximum active power consumption is 495 mW, while standby power is limited to 55 mW. It utilizes TTL-compatible inputs and outputs with three-state drivers.

Memory IC Feature Summary

• Features automatic power-down when deselected to reduce active power consumption
• Supports easy memory expansion through multiple Chip Enable options
• Maintains data retention at low supply voltages down to 2.0 V

Memory IC Applications

• High-speed parallel data buffering in industrial systems
• Cache memory implementation for microprocessor architectures
• Embedded storage in telecommunications equipment

Memory IC Procurement Notes

Verify the specific ordering suffix ZXC confirms lead-free status and TSOP Type I packaging. Confirm that the 'I' designation aligns with the required industrial temperature range specifications. Ensure compatibility with existing system voltage levels before procurement.

Memory IC Selection Notes

Select this component for applications requiring fast asynchronous read/write cycles with low standby power. Consider the package dimensions and pin configuration for PCB layout constraints. Evaluate the need for TTL-compatible logic levels against system interface requirements.

Memory IC Part Context

This part belongs to the Cypress Semiconductor FAST SRAM family, now managed under Infineon Technologies. It represents a standard 128K x 8 density option designed for legacy and modern embedded systems requiring reliable static random access memory solutions.

Memory IC Replacement Considerations

The CY7C1009BN-12ZXCT serves as a functional equivalent with a different SOJ package width. Verify pinout compatibility and physical footprint differences before substitution.