Memory IC CY7C1168KV18-400BZXC product image

CY7C1168KV18-400BZXC

  • Description:IC SRAM 18MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray,Tray

SKU:68c504119243 Category: Brand:

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CY7C1168KV18-400BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1168KV18-400BZXC

  • Description:IC SRAM 18MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray,Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, DDR II+
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:400 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1168KV18-400BZXC

CY7C1168KV18-400BZXC

Memory IC Overview

The CY7C1168KV18-400BZXC is an 18-Mbit DDR II+ synchronous SRAM with a 1M x 18 organization. It supports a maximum operating frequency of 400 MHz and operates within a voltage range of 1.7 V to 1.9 V. The device features a two-word burst architecture with 2.5 cycle read latency when the DOFF pin is asserted HIGH. It utilizes a parallel interface and is housed in a 165-ball FBGA package.

Memory IC Feature Summary

  • Supports high-bandwidth operation through a double data rate (DDR) interface with echo clocks for simplified data capture.
  • Features a two-word burst architecture that reduces address bus frequency requirements.
  • Includes a valid data indicator (QVLD) to assist in high-speed system timing.
  • Provides programmable output impedance via the ZQ pin for precise signal integrity matching.

Memory IC Applications

  • High-performance networking equipment requiring low-latency memory access
  • Telecommunications infrastructure systems
  • Industrial automation control units

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required 400 MHz operational frequency. Confirm the package type corresponds to the 165-ball FBGA configuration. Ensure the ordering suffix aligns with the desired lead-free finish and commercial temperature range specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component for designs requiring pipelined synchronous SRAM with DDR II+ architecture. It is suitable for applications needing reduced address bus frequencies through burst operations. Consider the 2.5-cycle read latency and the requirement for separate K and K input clocks for proper timing alignment.

Memory IC Part Context

This part belongs to the Infineon DDR II+ SRAM family, which includes variants like the CY7C1170KV18. These devices are designed for high-speed data processing using advanced 65nm technology. The family emphasizes high bandwidth and precise timing control through dedicated clock inputs and echo outputs.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: None identified in source material.

CY7C1168KV18-400BZXCCY7C1168KV18-400BZXC

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