Memory IC CY7C1250KV18-400BZC product image

CY7C1250KV18-400BZC

  • Description:IC SRAM 36MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:8077ab0eaca2 Category: Brand:

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CY7C1250KV18-400BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 36MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1250KV18-400BZC

  • Description:IC SRAM 36MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, DDR II+
  • Memory Size:36Mbit
  • Memory Organization:1M x 36
  • Memory Interface:Parallel
  • Clock Frequency:400 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1250KV18-400BZC

CY7C1250KV18-400BZC

Memory IC Overview

The CY7C1250KV18-400BZC is a commercial-grade synchronous static random-access memory component manufactured by Infineon Technologies. It belongs to the DDR-II+ CIO series and utilizes 65nm technology. The device offers a total density of 36 Mbit, organized as 1Mb x 36. It supports a maximum clock frequency of 400 MHz with a parallel interface. Operating voltage ranges from 1.7 V to 1.9 V, and it functions within a temperature range of 0°C to 70°C. The part features a lead ball finish of Sn/Pb and does not include on-die termination.

Memory IC Feature Summary

  • Supports high-speed data transfer via a parallel interface architecture
  • Utilizes 65nm process technology for efficient power consumption
  • Designed for commercial quality standards in standard operating environments

Memory IC Applications

  • High-performance networking equipment requiring fast memory access
  • Telecommunications infrastructure systems
  • Industrial control applications needing reliable synchronous SRAM

Memory IC Procurement Notes

Verify the specific ordering suffix and package type against official Infineon documentation before procurement. Confirm that the Sn/Pb lead finish meets your assembly requirements. Check current lifecycle status as this component may be subject to end-of-life notifications. Ensure compatibility with your system's voltage and temperature specifications.

Memory IC Selection Notes

Select this part when a 36-bit wide data path is required at speeds up to 400 MHz. Consider the absence of on-die termination if external termination circuits are already present in the design. Evaluate the commercial temperature range suitability for your deployment environment compared to industrial options.

Memory IC Part Context

This component is part of the broader CY7C1250KV18 family of synchronous SRAMs. It shares architectural similarities with other devices in the DDR-II+ CIO series but differs in organization and speed grades. It is distinct from QDR variants which offer different read/write port configurations.

Memory IC Replacement Considerations

Check for direct substitutes within the CY7C1250KV18 series with compatible speed grades. Verify pin-to-pin compatibility with alternative 36-bit synchronous SRAMs from other manufacturers if sourcing is restricted.

CY7C1250KV18-400BZCCY7C1250KV18-400BZC

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