CY7C1265V18-400BZXC

Memory IC Overview

The CY7C1265V18-400BZXC is a 36-Mbit QDR-II+ Synchronous Pipelined SRAM with a 1M x 36 organization. It supports clock frequencies up to 400 MHz and features separate independent read and write data ports for concurrent transactions. The device utilizes Double Data Rate (DDR) interfaces on both ports, transferring data at 800 MHz. It includes a 4-word burst architecture with a 2.5-cycle read latency, echo clocks (CQ/CQ), and a Valid Output Indicator (QVLD). Powered by a 1.8V core and 1.4V to 1.9V I/O supply, it is housed in a 165-ball FBGA package.

Memory IC Feature Summary

• Separate independent read and write data ports enable concurrent transactions without bus turnaround
• Double Data Rate (DDR) interfaces on both read and write ports maximize bandwidth
• Echo clocks and valid output indicator simplify data capture in high-speed systems
• Programmable impedance matching via ZQ pin ensures signal integrity

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure
• Data center storage controllers
• Enterprise server memory subsystems

Memory IC Procurement Notes

Verify the specific suffix BZXC against the manufacturer's current datasheet to confirm lead-free status and RoHS compliance. Confirm that the 165-ball FBGA package dimensions match your PCB footprint requirements. Ensure voltage levels for VDD and VDDQ align with system specifications before integration.

Memory IC Selection Notes

Select this component when a 36-bit wide interface is required alongside high throughput. The QDR-II+ architecture is suitable for applications needing simultaneous read and write operations. Consider the 165-ball FBGA package size and thermal characteristics during board layout planning.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR-II+ SRAM family, designed for high-performance synchronous memory applications. It shares architectural similarities with other members like the CY7C1263V18 but differs in data width and array organization. The technology leverages 65nm processes for improved density and power efficiency compared to earlier generations.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.