Memory IC CY7C1313CV18-250BZI product image

CY7C1313CV18-250BZI

  • Description:IC SRAM 18MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:cda28f136997 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

CY7C1313CV18-250BZI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1313CV18-250BZI

  • Description:IC SRAM 18MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1313CV18-250BZI

CY7C1313CV18-250BZI

Memory IC Overview

The CY7C1313CV18-250BZI is a 18-Mbit QDR-II synchronous pipelined SRAM with a 1M x 18 organization. It supports a maximum operating frequency of 250 MHz and operates on a 1.8V core voltage (±0.1V). The device features separate independent read and write data ports, enabling concurrent transactions without bus turnaround. It utilizes a 4-word burst architecture and double data rate interfaces on both ports for high bandwidth. The component is housed in a 165-ball FBGA package.

Memory IC Feature Summary

  • Separate independent read and write data ports support concurrent transactions
  • QDR-II architecture eliminates the need for data bus turnaround
  • Double Data Rate interfaces on both read and write ports maximize throughput
  • Delay Lock Loop enables accurate data placement and timing

Memory IC Applications

  • High-speed networking equipment
  • Telecommunications systems
  • Data acquisition systems

Memory IC Procurement Notes

Verify the specific suffix BZI against official Infineon documentation to confirm lead-free status and industrial temperature range specifications. Confirm current availability as this component may be subject to discontinuation notices. Ensure compatibility with existing system impedance requirements using the ZQ pin configuration.

Memory IC Selection Notes

Select this model for applications requiring 1M x 18 memory depth with 250 MHz performance. Verify that the system can accommodate the 1.8V core voltage and 1.4V to VDD IO voltage requirements. Ensure the design supports the 165-ball FBGA package dimensions and pitch constraints.

Memory IC Part Context

This part belongs to the Cypress/Infineon CY7C131x family of 18-Mbit QDR-II SRAMs. It shares architectural similarities with the CY7C1311, CY7C1911, and CY7C1315 variants, differing primarily in memory organization and address line count. The family utilizes a common 165-ball FBGA footprint.

Memory IC Replacement Considerations

CY7C1313KV18-250BZI

Memory IC FAQ

How does the device handle concurrent read and write operations?

The read and write ports operate completely independently. Addresses are latched on alternate rising edges of the input clock, allowing simultaneous access to any location without bus contention.

What is the function of the DOFF pin?

Connecting the DOFF pin to ground disables the Delay Lock Loop (DLL), causing the device to operate in QDR-I mode with one-cycle read latency and longer access times.

CY7C1313CV18-250BZICY7C1313CV18-250BZI

Click on the inquiry