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CY7C1313CV18-250BZI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.
The CY7C1313CV18-250BZI is a 18-Mbit QDR-II synchronous pipelined SRAM with a 1M x 18 organization. It supports a maximum operating frequency of 250 MHz and operates on a 1.8V core voltage (±0.1V). The device features separate independent read and write data ports, enabling concurrent transactions without bus turnaround. It utilizes a 4-word burst architecture and double data rate interfaces on both ports for high bandwidth. The component is housed in a 165-ball FBGA package.
Verify the specific suffix BZI against official Infineon documentation to confirm lead-free status and industrial temperature range specifications. Confirm current availability as this component may be subject to discontinuation notices. Ensure compatibility with existing system impedance requirements using the ZQ pin configuration.
Select this model for applications requiring 1M x 18 memory depth with 250 MHz performance. Verify that the system can accommodate the 1.8V core voltage and 1.4V to VDD IO voltage requirements. Ensure the design supports the 165-ball FBGA package dimensions and pitch constraints.
This part belongs to the Cypress/Infineon CY7C131x family of 18-Mbit QDR-II SRAMs. It shares architectural similarities with the CY7C1311, CY7C1911, and CY7C1315 variants, differing primarily in memory organization and address line count. The family utilizes a common 165-ball FBGA footprint.
CY7C1313KV18-250BZI
The read and write ports operate completely independently. Addresses are latched on alternate rising edges of the input clock, allowing simultaneous access to any location without bus contention.
Connecting the DOFF pin to ground disables the Delay Lock Loop (DLL), causing the device to operate in QDR-I mode with one-cycle read latency and longer access times.
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