CY7C1315BV18-200BZXC

Memory IC Overview

The CY7C1315BV18 is an 18-Mbit QDR-II SRAM with a 512K x 36 organization. It supports a maximum operating frequency of 200 MHz and draws up to 450 mA. The device uses a 1.8V core voltage (±0.1V) and operates within a commercial temperature range of 0°C to 70°C. It features separate read and write ports, a 165-ball FBGA package, and synchronous self-timed writes.

Memory IC Feature Summary

• Separate independent read and write data ports support concurrent transactions without bus turnaround
• Double Data Rate interfaces on both ports maximize bandwidth while simplifying system design
• Echo clocks simplify data capture in high-speed systems by synchronizing output timing
• Programmable impedance matching via external resistor for accurate signal integrity

Memory IC Applications

• High-bandwidth networking equipment requiring low-latency memory access
• Telecommunications infrastructure utilizing parallel interface protocols
• Industrial control systems needing synchronous pipelined burst architectures

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required clock frequency. Confirm the package variant corresponds to the 165-ball FBGA form factor. Ensure the voltage specifications align with the target system's power rails. Check for RoHS compliance status if environmental regulations apply to the deployment environment.

Memory IC Selection Notes

Select this component when a 36-bit data width is required alongside independent read and write paths. The QDR-II architecture eliminates data contention inherent in common I/O devices. Consider the DLL requirements and echo clock routing capabilities for high-speed PCB layout constraints.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR-II SRAM family, designed for applications demanding high throughput. It shares architectural similarities with other members like the CY7C1311BV18 but differs in data width and array organization. The technology leverages synchronous pipelining to maintain data coherence across concurrent operations.

Memory IC Replacement Considerations

CY7C1315KV18-200BZXC