CY7C1318KV18-250BZCT

Memory IC Overview

The CY7C1318KV18-250BZCT is a 18 Mbit synchronous static random access memory (SRAM) belonging to the DDR-II family. It features a memory organization of 1M x 18 and operates with a maximum clock frequency of 250 MHz. The device utilizes a parallel interface and functions within an operating voltage range of 1.7 V to 1.9 V. Access time is specified at 450 ps, with a maximum power supply current of 380 mA. It is housed in a 165-ball FBGA package designed for surface mount technology.

Memory IC Feature Summary

• Supports high-speed data transfer via a 250 MHz synchronous parallel interface
• Operates on low-voltage power supplies ranging from 1.7 V to 1.9 V
• Provides rapid data access through 450 ps access time specifications

Memory IC Applications

• High-performance networking equipment requiring fast memory buffering
• Telecommunications systems utilizing synchronous SRAM architectures
• Industrial control systems needing volatile data storage solutions

Memory IC Procurement Notes

This component is officially listed as End of Life or discontinued by the manufacturer. Verification of availability should focus on surplus distributors or secondary markets rather than direct factory orders. Buyers must confirm the authenticity of the source and check for moisture sensitivity labels, as the part is humidity sensitive. Ensure that the specific suffix matches the required package and temperature grade before acquisition.

Memory IC Selection Notes

Engineers selecting this part should consider its DDR-II architecture and 1.8V operation when designing compatible host interfaces. The 165-ball FBGA package requires appropriate PCB layout considerations for thermal management and signal integrity. Given the discontinuation status, alternative components within the same Infineon family or newer generations should be evaluated for long-term supply chain stability and pin compatibility.

Memory IC Part Context

This part belongs to the Infineon CY7C1318KV18 series of synchronous SRAMs. These devices are engineered for applications demanding high bandwidth and low latency. The series typically integrates advanced 65nm technology to optimize performance per watt. The specific model denotes the 18Mb density variant with a 250MHz speed grade.

Memory IC Replacement Considerations

Direct replacements may include other parts within the CY7C1318KV18 family with different speed grades or package options. Engineers should consult official cross-reference guides for pin-compatible alternatives that meet the same electrical and functional requirements.