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CY7C1320KV18-300BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.
The CY7C1320KV18-300BZXC is a 18 Mbit (512K x 36) QDR II synchronous static random-access memory manufactured by Infineon Technologies. It operates at a maximum clock frequency of 300 MHz with an access time of 450 ps. The device utilizes a parallel interface and functions within a supply voltage range of 1.7 V to 1.9 V, drawing a maximum power current of 670 mA. It is housed in a 165-ball FBGA package designed for surface mount technology and supports commercial operating temperatures from 0°C to +70°C.
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance and humidity sensitivity handling requirements prior to assembly. Review the latest product qualification report and FIT data for reliability assurance. Ensure supply chain stability as manufacturing may be discontinued or limited.
Select this component for designs requiring 18 Mbit density with 36-bit word width. The 300 MHz speed grade suits systems needing low-latency access. Compare against DDR-II alternatives if double-data-rate I/O is preferred over QDR dual-clock timing. Verify pin compatibility with existing 165-ball BGA footprints.
This part belongs to the Infineon QDR II SRAM family, leveraging 65 nm technology for improved performance over previous generations. It complements other devices like the CY7C1315KV18-300BZXC and CY7C1312KV18-300BZC within the same series, offering standardized interfaces for networking infrastructure.
Check for direct substitutes such as CY7C1315KV18-300BZXC or CY7C1320JV18-300BZC. Verify electrical parameter equivalence and package compatibility before substitution.
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