CY7C1413BV18-200BZC

Memory IC Overview

The CY7C1413BV18-200BZC is a 36-Mbit QDR-II SRAM with a 2M x 18 organization. It operates at a maximum frequency of 200 MHz using a 1.8V core voltage and 1.4V to VDD I/O supply. The device features separate independent read and write ports, supporting concurrent transactions without bus turnaround. It utilizes a 165-ball FBGA package (15x17 mm) and includes a Delay Lock Loop for accurate data placement.

Memory IC Feature Summary

• Separate independent read and write data ports support concurrent transactions
• QDR-II architecture eliminates the need for data bus turnaround
• Double Data Rate interfaces on both read and write ports maximize bandwidth
• Echo clocks simplify data capture in high-speed systems

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure
• Data communication systems requiring low latency

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required operating frequency. Confirm RoHS compliance status as older revisions may not meet current environmental standards. Ensure the package type corresponds to the target PCB footprint. Check for lead-free versus non-lead-free options if required by assembly processes.

Memory IC Selection Notes

Select this component when dual-port concurrency is necessary to maximize throughput. The 2M x 18 configuration suits applications needing wide data paths. Consider the 200 MHz speed grade for system timing constraints. Evaluate the 165-ball FBGA package size against available board space.

Memory IC Part Context

This part belongs to the Cypress CY7C141xBV18 family of QDR-II SRAMs. It shares architectural similarities with the CY7C1411BV18, CY7C1426BV18, and CY7C1415BV18, differing primarily in memory density and data width. All members utilize the same 165-ball FBGA package and QDR-II interface protocol.

Memory IC Replacement Considerations

Direct substitutes within the same family include CY7C1411BV18, CY7C1426BV18, and CY7C1415BV18, provided the memory organization fits the design. Speed grades such as -250BZC or -278BZC offer higher frequencies but require timing verification.