CY7C1423KV18-300BZXC

Memory IC Overview

The CY7C1423KV18-300BZXC is a 36 Mbit DDR-II Synchronous SRAM manufactured by Infineon Technologies. It features a memory organization of 2M x 18 and operates at a maximum clock frequency of 300 MHz. The device supports a parallel interface and functions within an operating voltage range of 1.7 V to 1.9 V. It is designed for commercial quality applications with an operating temperature range from 0°C to 70°C. The component utilizes a 165-ball FBGA package.

Memory IC Feature Summary

• Supports DDR-II synchronous interface architecture
• Provides high-speed data access via parallel interface
• Operates on low voltage power supply

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure systems
• Industrial control systems requiring fast memory access

Memory IC Procurement Notes

Verify the specific suffix BZXC against official Infineon documentation to confirm lead ball finish and packaging details. Confirm current product status as distribution channels may list discontinued or end-of-life variants. Ensure compatibility with system voltage requirements of 1.7 V to 1.9 V before procurement.

Memory IC Selection Notes

Select this component when a 36 Mbit capacity with 18-bit data width is required. The 300 MHz speed grade suits designs needing rapid data throughput. Consider the commercial temperature range and FBGA package constraints during PCB layout and thermal management planning.

Memory IC Part Context

This part belongs to the CY7C1423KV18 family of DDR-II Synchronous SRAMs. It shares architectural similarities with other members like the CY7C1423KV18-300BZC, differing primarily in surface finish specifications. The family targets applications demanding high bandwidth and low latency memory solutions.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.