CY7C1425KV18-300BZXC

Memory IC Overview

The CY7C1425KV18-300BZXC is a 36-Mbit QDR II SRAM with a 4M x 9 organization. It supports a maximum clock frequency of 300 MHz and operates within a voltage range of 1.7 V to 1.9 V for the core supply. The device utilizes a 165-ball FBGA package measuring 13 x 15 mm. It features separate read and write ports, two-word burst architecture, and echo clocks for high-speed data capture.

Memory IC Feature Summary

• Separate independent read and write data ports supporting concurrent transactions
• Two-word burst architecture on all accesses with double data rate interfaces
• Echo clocks (CQ and CQ) to simplify data capture in high-speed systems
• Programmable impedance output buffers via ZQ pin

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure
• Industrial automation control systems

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required system timing constraints. Confirm that the package variant aligns with the PCB footprint design. Ensure the manufacturing source is authorized to guarantee component authenticity and traceability throughout the supply chain.

Memory IC Selection Notes

Select this part when a 4M x 9 density is required alongside QDR II interface capabilities. Consider the 300 MHz speed grade if system latency requirements are less stringent than those needing the 333 MHz variant. Evaluate power consumption against the 300 MHz operating current specifications.

Memory IC Part Context

This component belongs to the Cypress CY7C142xKV18 family of 36-Mbit QDR II SRAMs. It shares architectural similarities with the CY7C1412KV18 and CY7C1414KV18, differing primarily in memory organization and address pin count while maintaining identical package dimensions and interface protocols.

Memory IC Replacement Considerations

CY7C1425KV18-333BZXC