Memory IC CY7C1426UV18-300BZC product image

CY7C1426UV18-300BZC

$68.23
  • Description:IC SRAM 36MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bag

SKU:fe838aef17c6 Category: Brand:

  
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CY7C1426UV18-300BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 36MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1426UV18-300BZC

  • Description:IC SRAM 36MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bag
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:36Mbit
  • Memory Organization:4M x 9
  • Memory Interface:Parallel
  • Clock Frequency:300 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1426UV18-300BZC

CY7C1426UV18-300BZC

Memory IC Overview

The CY7C1426UV18-300BZC is a QDR-II synchronous static random-access memory (SRAM) manufactured by Infineon Technologies. It features a density of 36 Mbit with an organization of 4M x 9. The device operates at a maximum clock frequency of 300 MHz and supports parallel interfaces. It functions within a supply voltage range of 1.7 V to 1.9 V and is rated for commercial temperature operation from 0°C to 70°C. The component utilizes a 165-ball FBGA package measuring 13x15 mm.

Memory IC Feature Summary

  • Synchronous Quad Data Rate II architecture for high-speed data throughput
  • Parallel interface supporting standard SRAM control signals
  • Low-voltage operation compatible with 1.8V logic systems

Memory IC Applications

  • High-performance networking equipment
  • Telecommunications infrastructure
  • Industrial automation controllers

Memory IC Procurement Notes

Verify the specific suffix 'U' against official Infineon documentation, as it may indicate a non-RoHS compliant variant or specific lead finish distinct from the 'K' series. Confirm availability status, as older QDR-II parts may be discontinued or subject to last-time buys. Ensure the 165-FBGA footprint matches the target PCB design constraints before procurement.

Memory IC Selection Notes

Select this part when a 36 Mbit capacity with 4M x 9 organization is required for synchronous applications. The 300 MHz speed grade suits designs needing low-latency access. Compare against the CY7C1426KV18-300BZC if industrial temperature ratings (-40°C to 85°C) are necessary instead of commercial grades. Ensure the system power budget accommodates the dynamic current requirements of QDR-II technology.

Memory IC Part Context

This component belongs to the Cypress/Infineon QDR-II family of synchronous SRAMs, designed for bandwidth-intensive applications. It succeeds earlier generations like QDR-I and precedes newer QDR-III variants. The part integrates on-die termination and precise timing characteristics typical of the QDR architecture, facilitating easy integration into high-speed bus systems without external termination components.

Memory IC Replacement Considerations

The CY7C1426KV18-300BZC is a pin-compatible alternative offering industrial temperature range qualification. For higher densities, consider the CY7C1512KV18-300BZXI (72 Mbit). Verify that any substitute maintains the same 165-FBGA package dimensions and electrical specifications to ensure board compatibility.

CY7C1426UV18-300BZCCY7C1426UV18-300BZC
$68.23
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