Memory IC CY7C1460BV25-250BZXC product image

CY7C1460BV25-250BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:NoBL™
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:97f5be16f298 Category: Brand:

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CY7C1460BV25-250BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 36MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1460BV25-250BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:NoBL™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:36Mbit
  • Memory Organization:1M x 36
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (15x17)
  • Access Time:2.6 ns

Memory IC datasheet and documents for CY7C1460BV25-250BZXC

CY7C1460BV25-250BZXC

Memory IC Overview

The CY7C1460BV25 is a 36-Mbit (1 M × 36) synchronous pipelined burst SRAM featuring NoBL architecture. It supports 250-MHz bus operations with zero wait states and utilizes fully registered inputs and outputs. The device operates on a 2.5 V core and I/O power supply, offering fast clock-to-output times of 2.6 ns. It includes byte write capability, synchronous self-timed writes, and a ZZ sleep mode for power conservation.

Memory IC Feature Summary

  • NoBL logic enables unlimited true back-to-back read/write operations without wait states
  • Fully registered architecture ensures pipelined operation for all synchronous inputs and outputs
  • On-chip synchronous self-timed write circuitry simplifies write sequences
  • Supports linear or interleaved burst orders via the MODE input pin

Memory IC Applications

  • High-speed networking equipment requiring low-latency memory access
  • Telecommunications systems utilizing synchronous data processing
  • Industrial control applications needing reliable pipelined memory structures

Memory IC Procurement Notes

Verify the specific package configuration against project requirements, as the BV25 designation corresponds to the 165-ball FBGA format. Confirm that the 2.5 V operating voltage aligns with the system's power distribution network. Ensure compatibility with the Cypress/Infineon NoBL interface timing specifications during integration.

Memory IC Selection Notes

Select this component when zero-wait-state performance is critical for system throughput. The 1 M × 36 organization suits applications requiring wide data paths. Consider the 165-ball FBGA package constraints for PCB layout. Verify that the 2.5 V supply rails are available within the target design environment.

Memory IC Part Context

This part belongs to the Cypress Semiconductor CY7C1460BV/CY7C1462BV family of 36-Mbit NoBL SRAMs. It is functionally equivalent to ZBT devices but offers enhanced pipelining capabilities. The family includes variants with different densities and packages, such as the CY7C1462BV25 in TQFP-100.

Memory IC Replacement Considerations

The CY7C1462BV25 serves as a functional alternative within the same family, offering a 2 M × 18 organization instead of 1 M × 36. Both share identical pinouts and NoBL architecture, facilitating potential drop-in replacements if address mapping allows.

CY7C1460BV25-250BZXCCY7C1460BV25-250BZXC

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