Memory IC CY7C1512KV18-250BZI product image

CY7C1512KV18-250BZI

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tray

SKU:649b920e0b25 Category: Brand:

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CY7C1512KV18-250BZI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1512KV18-250BZI

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:72Mbit
  • Memory Organization:4M x 18
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for CY7C1512KV18-250BZI

CY7C1512KV18-250BZI

Memory IC Overview

The CY7C1512KV18-250BZI is a 72-Mbit QDR II SRAM with a 4M x 18 organization. It supports a maximum clock frequency of 250 MHz and features separate independent read and write data ports for concurrent transactions. The device utilizes double data rate interfaces on both ports, transferring data at 700 MHz. It operates within a core voltage range of 1.7 V to 1.9 V and includes echo clocks (CQ/CQ) to simplify high-speed data capture.

Memory IC Feature Summary

  • Supports concurrent read and write transactions through separate independent data ports
  • Features double data rate interfaces on both read and write ports for maximized bandwidth
  • Includes echo clocks synchronized to output data to minimize clock skew and flight time mismatches
  • Provides byte write select functionality to enable partial data updates without full array overwrites

Memory IC Applications

  • High-bandwidth networking equipment requiring low-latency memory access
  • Telecommunications systems utilizing synchronous pipelined SRAM architectures
  • Industrial applications requiring robust data coherency and independent port operations

Memory IC Procurement Notes

Verify the specific suffix BZI against official Infineon documentation to confirm lead-free status and package variant. Ensure compatibility with the required 165-ball FBGA footprint and check for moisture sensitivity level requirements during storage and handling. Confirm that the 250 MHz speed grade matches the system timing constraints.

Memory IC Selection Notes

Select this component when a 72-Mbit capacity with a 18-bit data width is required. The QDR II architecture is suitable for designs needing simultaneous read and write capabilities without bus turnaround delays. Consider the 250 MHz speed grade relative to system clock requirements and verify that the 1.8V I/O supply aligns with the controller interface.

Memory IC Part Context

This part belongs to the CY7C1512KV18 family of QDR II SRAMs manufactured by Infineon Technologies. The family includes variants with different speeds and organizations, such as the CY7C1510KV18 and CY7C1514KV18. These devices are designed for high-performance applications demanding high throughput and deterministic latency.

Memory IC Replacement Considerations

Check for CY7C1512KV18-250BZXC or other speed grades within the same KV18 series if pinout compatibility is required. Verify that any substitute maintains the 4M x 18 organization and 165-ball FBGA package dimensions.

CY7C1512KV18-250BZICY7C1512KV18-250BZI

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