Memory IC CY7C1518KV18-250BZC product image

CY7C1518KV18-250BZC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:b7363177a994 Category: Brand:

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CY7C1518KV18-250BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1518KV18-250BZC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, DDR II
  • Memory Size:72Mbit
  • Memory Organization:4M x 18
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1518KV18-250BZC

CY7C1518KV18-250BZC

Memory IC Overview

The CY7C1518KV18-250BZC is a 72-Mbit DDR-II synchronous SRAM with a 4M x 18 organization. It supports a maximum operating frequency of 250 MHz and operates within a 1.7 V to 1.9 V voltage range. The device features a two-word burst architecture, utilizing double data rate interfaces for high bandwidth. It is housed in a 165-ball FBGA package and includes JTAG compatibility.

Memory IC Feature Summary

  • Two-word burst architecture reduces address bus frequency requirements
  • Double data rate interface transfers data at twice the clock frequency
  • Echo clocks simplify data capture timing in high-speed systems
  • Synchronous internally self-timed writes eliminate external control logic

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Industrial automation controllers
  • Test and measurement instruments

Memory IC Procurement Notes

Verify the specific suffix 'BZC' against official Infineon documentation to confirm lead-free status and temperature grade. Ensure the selected variant matches the required 250 MHz speed bin. Cross-reference the package marking code with the datasheet to prevent counterfeit substitution during assembly.

Memory IC Selection Notes

Select this component when a 4M x 18 data width is required for memory expansion. The 250 MHz speed grade offers a balance between performance and power consumption compared to higher-frequency variants. Consider the 165-ball FBGA footprint constraints and thermal dissipation requirements for the final PCB design.

Memory IC Part Context

This part belongs to the CY7C15KV18 family of 72-Mbit DDR-II SRAMs. It shares architectural similarities with the CY7C1520KV18 but differs in data width organization. The series utilizes advanced 65 nm technology for improved density and power efficiency over previous generations.

Memory IC Replacement Considerations

CY7C1518KV18-333BZC: Higher speed grade (333 MHz). CY7C1518KV18-300BZC: Intermediate speed grade (300 MHz). Verify electrical characteristics and timing parameters before substituting.

CY7C1518KV18-250BZCCY7C1518KV18-250BZC

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