Memory IC CY7C1545V18-333BZC product image

CY7C1545V18-333BZC

$139.94
  • Description:IC SRAM 72MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:8915dd5bb881 Category: Brand:

  
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CY7C1545V18-333BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1545V18-333BZC

  • Description:IC SRAM 72MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:72Mbit
  • Memory Organization:2M x 36
  • Memory Interface:Parallel
  • Clock Frequency:333 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (15x17)
  • Access Time:-

Memory IC datasheet and documents for CY7C1545V18-333BZC

CY7C1545V18-333BZC

Memory IC Overview

The CY7C1545V18-333BZC is a 72-Mbit QDR-II+ synchronous SRAM with a 2M x 36 organization. It supports a maximum clock frequency of 333 MHz and features a four-word burst architecture with 2.0 cycle read latency. The device utilizes separate independent read and write data ports to support concurrent transactions, eliminating bus turn-arounds. It operates on a single multiplexed address input bus latched for both ports. Power supplies include a core VDD of 1.8V ± 0.1V and IO VDDQ ranging from 1.4V to VDD.

Memory IC Feature Summary

  • Separate independent read and write data ports enable concurrent transactions without bus contention
  • Four-word burst architecture reduces address bus frequency requirements
  • Double Data Rate interfaces on both read and write ports maximize bandwidth
  • Echo clocks simplify data capture in high-speed systems

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Data routing and switching applications

Memory IC Procurement Notes

Verify the specific speed grade suffix (e.g., -333) against the required system clock frequency. Confirm package type matches the 165-Ball FBGA footprint dimensions. Ensure voltage levels align with the specified core and I/O supply ranges before integration.

Memory IC Selection Notes

Select this component for designs requiring high throughput with independent read/write paths. Consider the 333 MHz speed bin if system timing allows. Verify compatibility with HSTL input/output buffer standards and impedance matching requirements via the ZQ pin.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR-II+ SRAM family, designed for high-performance memory applications. It shares architectural similarities with QDR-II but offers enhanced features like echo clocks and valid data indicators. The 72-Mbit density provides substantial storage for complex buffering tasks.

Memory IC Replacement Considerations

Check for direct pin-compatible upgrades within the same QDR-II+ family. Verify that any substitute maintains the 2.0 cycle latency and 333 MHz operational frequency. Ensure the replacement supports the same 165-ball FBGA package.

CY7C1545V18-333BZCCY7C1545V18-333BZC
$139.94
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