CY7C1550KV18-450BZXI

Memory IC Overview

The CY7C1550KV18-450BZXI is a 72-Mbit DDR II+ Synchronous Pipelined SRAM organized as 2M x 36. It supports a maximum clock frequency of 450 MHz, enabling data transfer rates up to 900 MHz via double data rate interfaces. The device features a two-word burst architecture with 2.0 cycle read latency when the DOFF pin is asserted HIGH. It operates with a core voltage (VDD) of 1.8 V ± 0.1 V and an I/O supply (VDDQ) ranging from 1.4 V to VDD. Maximum operating current is 820 mA for the ×36 configuration.

Memory IC Feature Summary

• Supports high-bandwidth operations through a 450-MHz clock and double data rate interface transferring data at 900 MHz.
• Features a two-word burst architecture that reduces address bus frequency while maintaining high throughput.
• Includes echo clocks (CQ/CQ) and a valid data indicator (QVLD) to simplify data capture in high-speed systems.
• Integrates programmable output impedance matching via the ZQ pin and supports byte write select functionality.

Memory IC Applications

• High-performance networking equipment requiring fast packet lookup and classification
• Telecommunications infrastructure utilizing parallel processing architectures
• Industrial control systems demanding deterministic synchronous memory access

Memory IC Procurement Notes

Verify the specific ordering suffix BZXI against the manufacturer's official documentation to confirm package type and lead-free status. Ensure the design accommodates the required VDDQ range of 1.4 V to VDD and implements proper ZQ termination for impedance matching. Confirm compatibility with the 165-ball FBGA footprint dimensions of 13 × 15 × 1.4 mm during PCB layout.

Memory IC Selection Notes

Select this component for applications requiring 72-Mbit density with a 36-bit data width. It is suitable for designs needing 450-MHz operation with 2.0-cycle read latency. Consider the CY7C1548KV18 if a 18-bit data width is preferred instead. Ensure the system supports the necessary dual-clock input requirements for DDR II+ timing.

Memory IC Part Context

This part belongs to the Cypress/Infineon DDR II+ SRAM family, which combines SRAM core speed with advanced synchronous peripheral circuitry. It utilizes a 65-nm technology node to achieve high performance and low power consumption compared to previous generations. The device is designed for read-intensive functions where high bandwidth and low latency are critical.

Memory IC Replacement Considerations

The CY7C1548KV18 is a compatible alternative within the same datasheet offering identical electrical characteristics but organized as 4M x 18 instead of 2M x 36. Verify pinout compatibility and software logic adjustments for the different data width before substitution.

Memory IC FAQ

How does the DOFF pin affect the read latency?

When the DOFF pin is asserted HIGH, the device operates with a 2.0 cycle read latency. When DOFF is asserted LOW, it behaves like a DDR I device with a 1 cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connected between ZQ and ground tunes the output drivers to match the system data bus impedance.