CY7C15632KV18-400BZXC

Memory IC Overview

The CY7C15632KV18-400BZXC is a QDR-II+ SRAM with 72 Mbit density and 4Mb x 18 organization. It operates at 400 MHz with 1.7 V to 1.9 V supply voltage. The device uses parallel interface, FBGA-165 package, and supports 0°C to 70°C temperature range.

Memory IC Feature Summary

• QDR-II+ architecture for high-speed synchronous operation
• Parallel interface supporting burst data transfers
• Integrated on-die termination for signal integrity

Memory IC Applications

• High-performance networking equipment
• Telecommunications systems
• Data center infrastructure

Memory IC Procurement Notes

Verify component authenticity through authorized Infineon channels due to end-of-life status. Confirm RoHS compliance documentation matches specific batch requirements. Validate package marking against official datasheet specifications to prevent counterfeit substitution during procurement processes.

Memory IC Selection Notes

Select this part for applications requiring QDR-II+ performance with 18-bit data width. Ensure system design accommodates 1.7V to 1.9V power supply constraints. Verify thermal management meets commercial grade temperature operating limits of 0°C to 70°C for reliable long-term operation in target environments.

Memory IC Part Context

Part of Cypress/Infineon CY7C15632KV18 family featuring QDR-II+ technology. Offers improved performance over previous QDR-II generations using 65nm process technology. Designed for high-throughput memory applications requiring low latency and deterministic access patterns in complex system architectures.

Memory IC Replacement Considerations

Check Infineon EOL notifications for discontinuation status. Consider CY7C15632KV18 variants with different speed grades or packaging options as potential substitutes if available. Verify pin compatibility and electrical characteristics before implementing any replacement strategy.