Memory IC CY7C1564XV18-450BZXC product image

CY7C1564XV18-450BZXC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:d48cdb0ee854 Category: Brand:

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CY7C1564XV18-450BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1564XV18-450BZXC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II+
  • Memory Size:72Mbit
  • Memory Organization:2M x 36
  • Memory Interface:Parallel
  • Clock Frequency:450 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1564XV18-450BZXC

CY7C1564XV18-450BZXC

Memory IC Overview

The CY7C1564XV18 is a 72-Mbit QDR II+ Xtreme Synchronous Pipelined SRAM organized as 2M x 36. It features a maximum operating frequency of 450 MHz with double data rate interfaces on both read and write ports, enabling data transfer at 900 MHz. The device utilizes a two-word burst architecture with 2.5 cycle read latency when the DOFF pin is asserted HIGH. Core voltage (VDD) operates between 1.7 V and 1.9 V, while I/O voltage (VDDQ) ranges from 1.4 V to 1.6 V. It is housed in a 165-ball FBGA package measuring 13 x 15 x 1.4 mm.

Memory IC Feature Summary

  • Supports concurrent independent read and write transactions using separate data ports to eliminate bus turnaround requirements.
  • Employs a two-word burst architecture that reduces address bus frequency while maximizing memory bandwidth through DDR interfaces.
  • Includes echo clocks (CQ/CQ) and a valid data indicator (QVLD) to simplify data capture timing in high-speed systems.
  • Integrates a phase-locked loop (PLL) for accurate data placement and programmable output impedance via the ZQ pin.

Memory IC Applications

  • High-bandwidth networking equipment requiring low-latency packet buffering
  • Telecommunications infrastructure utilizing QDR interface standards
  • Data acquisition systems needing simultaneous read/write operations

Memory IC Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and lead condition prior to installation. Ensure supply chain sources provide traceability documentation. Validate electrical parameters match the required operational range for your specific system design constraints.

Memory IC Selection Notes

Select this model for applications demanding high throughput with independent port access. The 2M x 36 organization suits wide-data path architectures. Consider the 2.5-cycle latency for standard operation or disable the PLL for QDR-I compatibility if lower speeds are sufficient. Ensure power supplies meet the strict core and I/O voltage tolerances specified.

Memory IC Part Context

This component belongs to the QDR II+ Xtreme family of synchronous SRAMs. It shares architectural similarities with the CY7C1562XV18 but differs in data width configuration. The series is designed for high-performance embedded memory solutions where deterministic access times and high bandwidth are critical system requirements.

Memory IC Replacement Considerations

Direct substitutes within the same density and speed class include the CY7C1562XV18 for 18-bit width applications. Verify pinout compatibility and voltage levels before swapping. Cross-referencing with other QDR II+ devices requires careful evaluation of burst architecture and latency settings.

CY7C1564XV18-450BZXCCY7C1564XV18-450BZXC

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