CY7C1565KV18-400BZXC

Memory IC Overview

The CY7C1565KV18 is a 72-Mbit QDR II+ synchronous pipelined SRAM organized as 2M x 36. It supports maximum operating frequencies up to 400 MHz with a 550 MHz capability in the series. The device features separate independent read and write data ports, enabling concurrent transactions without bus turnaround. It utilizes a four-word burst architecture with 2.5-cycle read latency when DOFF is asserted HIGH. The core voltage is 1.8 V ± 0.1 V, while I/O supplies support 1.4 V to VDD. Data transfer occurs at double data rate (DDR) interfaces on both ports.

Memory IC Feature Summary

• Separate independent read and write data ports for concurrent transaction support
• Four-word burst architecture reducing address bus frequency requirements
• Double data rate interfaces on both read and write ports for high bandwidth
• Echo clocks and valid data indicator simplify data capture in high-speed systems

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure
• Data communication systems requiring low latency

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required clock frequency, as the base part number covers multiple grades. Confirm package availability, noting that Pb-free and non-Pb-free options exist within the family. Check for RoHS compliance status if environmental regulations apply to the target assembly process. Ensure supply chain sources are authorized distributors to guarantee component authenticity and traceability.

Memory IC Selection Notes

Select this component for applications demanding high throughput with independent read/write capabilities. The QDR II+ architecture eliminates data bus turnaround delays found in common I/O devices. Consider the 2.5-cycle latency for performance balance. Verify system impedance matching using the ZQ pin configuration. Ensure the design accommodates the 165-ball FBGA package dimensions and thermal requirements.

Memory IC Part Context

This device belongs to the Cypress/Infineon QDR II+ SRAM family, designed for high-performance memory applications. It succeeds earlier QDR generations by offering improved bandwidth and reduced latency through its four-word burst mode. The CY7C1565KV18 specifically targets the 2M x 36 configuration, providing substantial memory density for complex data processing tasks in synchronous environments.

Memory IC Replacement Considerations

Direct replacements include other speed grades within the CY7C1565KV18 series, such as the 450 MHz or 550 MHz variants, provided timing constraints allow. Cross-family substitutes like the CY7C1565KV18-450BZC offer similar functionality with different clock specifications. Verify pin compatibility and electrical characteristics before substitution.