CY7C1568KV18-450BZXC

Memory IC Overview

The CY7C1568KV18-450BZXC is a DDR-II+ CIO synchronous SRAM with a density of 72 Mbit, organized as 4M x 18. It operates at a maximum clock frequency of 450 MHz and supports parallel interfaces. The device functions within a voltage range of 1.7 V to 1.9 V and an operating temperature range of 0°C to 70°C. It utilizes Sn/Ag/Cu lead ball finishes and is housed in commercial-grade packaging.

Memory IC Feature Summary

• Integrates Double Data Rate II architecture for high-speed data throughput
• Includes On-Die Termination (ODT) capabilities for signal integrity
• Supports parallel interface operations for network applications

Memory IC Applications

• Packet lookup in networking equipment
• Packet classification in communication systems
• Read-intensive database caching

Memory IC Procurement Notes

Verify the specific suffix 'BZXC' against official Infineon documentation to confirm package type and termination details. Ensure compatibility with 1.7V–1.9V power supplies and 0°C–70°C environmental limits. Cross-reference part numbers with current datasheets to avoid obsolete variants.

Memory IC Selection Notes

Select this component for designs requiring 72 Mbit capacity with 450 MHz performance. Verify that the system supports DDR-II+ signaling and ODT requirements. Confirm thermal management meets the commercial grade specifications.

Memory IC Part Context

This part belongs to the Infineon DDR-II+ CIO family, designed for high-performance memory applications. It shares architectural similarities with other CY7C15xx series devices but offers specific density and speed configurations tailored for modern networking standards.

Memory IC Replacement Considerations

Consult official substitution guides for equivalent densities and speeds. Verify pinout and electrical parameter compatibility before replacing existing inventory.