Memory IC CY7C1612KV18-300BZXC product image

CY7C1612KV18-300BZXC

  • Description:IC SRAM 144MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:1aac5e337780 Category: Brand:

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CY7C1612KV18-300BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 144MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1612KV18-300BZXC

  • Description:IC SRAM 144MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:144Mbit
  • Memory Organization:8M x 18
  • Memory Interface:Parallel
  • Clock Frequency:300 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (15x17)
  • Access Time:-

Memory IC datasheet and documents for CY7C1612KV18-300BZXC

CY7C1612KV18-300BZXC

Memory IC Overview

The CY7C1612KV18-300BZXC is a 144-Mbit QDR II SRAM with an 8M x 18 organization. It supports a maximum operating frequency of 300 MHz and operates within a core voltage range of 1.7 V to 1.9 V. The device utilizes a 165-ball fine-pitch ball grid array (FBGA) package measuring 15 × 17 × 1.4 mm.

Memory IC Feature Summary

  • Features separate independent read and write data ports to support concurrent transactions without bus turnaround
  • Employs double data rate interfaces on both read and write ports for high bandwidth
  • Includes echo clocks to simplify data capture in high-speed systems
  • Supports byte write operations via dedicated select inputs

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Data center storage controllers

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required clock frequency. Confirm the package variant corresponds to the lead-free specification. Ensure the ordering code aligns with the exact density and organization requirements for the target design.

Memory IC Selection Notes

Select this component for applications requiring simultaneous read and write access. Consider the 165-ball FBGA footprint for board layout. Evaluate the power supply requirements against the specified voltage ranges for reliable operation.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR II SRAM family, which provides pipelined burst architecture. It shares functional similarities with other members like the CY7C1625KV18 and CY7C1614KV18, differing primarily in memory organization and address pin counts.

Memory IC Replacement Considerations

CY7C1612KV18-333BZXC

Memory IC FAQ

How does the DOFF pin affect read latency?

When DOFF is asserted high, the device operates with 1.5-cycle read latency. When asserted low, it behaves in QDR I mode with 1-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for impedance matching. An external resistor connects this pin to ground to tune the output driver impedance to the system data bus.

CY7C1612KV18-300BZXCCY7C1612KV18-300BZXC

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