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CY7C1612KV18-300BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 144MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.
The CY7C1612KV18-300BZXC is a 144-Mbit QDR II SRAM with an 8M x 18 organization. It supports a maximum operating frequency of 300 MHz and operates within a core voltage range of 1.7 V to 1.9 V. The device utilizes a 165-ball fine-pitch ball grid array (FBGA) package measuring 15 × 17 × 1.4 mm.
Verify the specific speed grade suffix matches the required clock frequency. Confirm the package variant corresponds to the lead-free specification. Ensure the ordering code aligns with the exact density and organization requirements for the target design.
Select this component for applications requiring simultaneous read and write access. Consider the 165-ball FBGA footprint for board layout. Evaluate the power supply requirements against the specified voltage ranges for reliable operation.
This part belongs to the Cypress/Infineon QDR II SRAM family, which provides pipelined burst architecture. It shares functional similarities with other members like the CY7C1625KV18 and CY7C1614KV18, differing primarily in memory organization and address pin counts.
CY7C1612KV18-333BZXC
When DOFF is asserted high, the device operates with 1.5-cycle read latency. When asserted low, it behaves in QDR I mode with 1-cycle read latency.
The ZQ pin is used for impedance matching. An external resistor connects this pin to ground to tune the output driver impedance to the system data bus.
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