CY7C1612KV18-300BZXI

Memory IC Overview

The CY7C1612KV18-300BZXI is a 144-Mbit QDR II SRAM with an 8M x 18 organization. It operates at a maximum clock frequency of 300 MHz, utilizing dual data rate interfaces on both read and write ports for concurrent transactions. The device features separate independent data ports to eliminate bus turnaround delays. It supports a core voltage of 1.8 V (± 0.1 V) and I/O voltages ranging from 1.4 V to VDD. The component is housed in a 165-ball FBGA package measuring 15 × 17 × 1.4 mm.

Memory IC Feature Summary

• Supports concurrent read and write operations through separate independent data ports
• Features two-word burst architecture on all accesses for high bandwidth
• Includes echo clocks to simplify data capture in high-speed systems
• Provides programmable output impedance via external resistor matching

Memory IC Applications

• High-performance networking equipment requiring low latency
• Telecommunications infrastructure systems
• Data center storage controllers
• Industrial automation control units

Memory IC Procurement Notes

Verify the specific suffix 'BZXI' against official Infineon documentation to confirm lead-free status and industrial temperature range specifications. Ensure compatibility with existing board layouts regarding the 165-ball FBGA footprint. Confirm that the selected variant matches the required operating voltage and speed grade for the target application environment.

Memory IC Selection Notes

Select this component when system design requires simultaneous read and write throughput without bus contention. The QDR II architecture simplifies interface logic by removing turnaround cycles. Consider the 165-ball FBGA package constraints and thermal requirements. Verify that the host controller supports the necessary DDR clocking scheme and echo clock signals for optimal signal integrity.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR II SRAM family, which utilizes a pipelined synchronous architecture. The CY7C1612KV18 specifically offers an 8M x 18 configuration within the 144-Mbit density class. It shares functional similarities with the CY7C1625KV18 and CY7C1614KV18 but differs in address depth and data width organization.

Memory IC Replacement Considerations

Direct substitutes include other variants within the CY7C16xxKV18 series such as the CY7C1613KV18 or CY7C1614KV18, provided the memory organization and pinout compatibility are verified. Cross-referencing with older QDR I devices requires careful timing analysis due to latency differences.