CY7C1614KV18-300BZC

Memory IC Overview

The CY7C1614KV18-300BZC is a 144-Mbit QDR II SRAM with a 2M x 36 organization. It operates at a maximum clock frequency of 300 MHz and features separate independent read and write data ports for concurrent transactions. The device utilizes double data rate interfaces on both ports, transferring data at 600 MHz. It includes two input clocks (K and K) for precise timing and echo clocks (CQ and CQ) to simplify data capture. The memory uses a single multiplexed address bus and supports byte writes via BWS inputs. It operates with a core voltage of 1.8 V and I/O voltages from 1.4 V to 1.9 V.

Memory IC Feature Summary

• Separate independent read and write data ports enable concurrent transactions without bus turnaround.
• Double data rate interfaces on both read and write ports maximize bandwidth while simplifying system design.
• Echo clocks synchronized to output data minimize clock skew and flight time mismatches in high-speed systems.
• Single multiplexed address input bus latches addresses for both read and write operations.

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure
• Data communication systems

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required operating frequency. Confirm the package type corresponds to the 165-ball FBGA form factor. Ensure the supply voltage requirements align with the 1.8 V core and 1.4 V to 1.9 V I/O specifications. Check for RoHS compliance if lead-free packaging is mandatory for the assembly process.

Memory IC Selection Notes

Select this component when a 144-Mbit capacity with a 36-bit word width is required. Choose this part over other QDR II variants if the 300 MHz speed grade meets the system throughput needs. Consider the separate port architecture for applications requiring simultaneous read and write access. Verify that the board layout supports the necessary echo clock routing for optimal signal integrity.

Memory IC Part Context

This device belongs to the Cypress Semiconductor CY7C16xxKV18 family of 144-Mbit QDR II SRAMs. It shares architectural similarities with the CY7C1625KV18 and CY7C1612KV18 but differs in memory organization and pin count. The family is designed for high-performance synchronous pipelined burst operations using QDR II technology.

Memory IC Replacement Considerations

CY7C1614KV18-333BZC offers a higher 333 MHz speed grade within the same package and organization. CY7C1612KV18 provides an 8M x 18 configuration with similar interface characteristics. CY7C1625KV18 offers a 16M x 9 configuration for width expansion scenarios.