CY7C1615KV18-333BZXC

Memory IC Overview

The CY7C1615KV18-333BZXC is a 144-Mbit QDR II SRAM with a 4 M x 36 organization. It operates at a maximum clock frequency of 333 MHz, providing high bandwidth through concurrent read and write ports. The device features a 165-ball FBGA package (15x17 mm) and supports 1.8 V core voltage with 1.4 V to 1.9 V I/O supply. It includes echo clocks for simplified data capture and a PLL for accurate data placement.

Memory IC Feature Summary

• Separate independent read and write data ports support concurrent transactions without bus turnaround
• Four-word burst architecture reduces address bus frequency while maximizing throughput
• Echo clocks simplify data capture in high-speed systems by synchronizing with output data
• Programmable impedance matching via ZQ pin ensures signal integrity across varying conditions

Memory IC Applications

• High-performance networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure utilizing synchronous pipelined memory
• Industrial control systems needing reliable volatile storage with high bandwidth

Memory IC Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific suffix BZXC indicates Pb-free packaging and commercial temperature range. Request official datasheets and FIT reports to ensure compliance with RoHS standards and quality requirements before finalizing procurement decisions.

Memory IC Selection Notes

Select this model when a 4 M x 36 configuration is required for QDR II applications. Ensure system design accommodates the 165-ball FBGA footprint and 1.8 V core voltage. Verify that the host controller supports the necessary DDR interface timing and echo clock signals for optimal performance at 333 MHz operation.

Memory IC Part Context

This component belongs to the CY7C1615KV18 series of 144-Mbit QDR II SRAMs manufactured by Infineon Technologies. It shares architectural similarities with the CY7C1613KV18 but differs in data width organization. The series utilizes 65-nm technology to deliver high-speed synchronous operations suitable for demanding embedded memory applications.

Memory IC Replacement Considerations

CY7C1615KV18-300BZXC offers identical functionality at a reduced 300 MHz speed. CY7C2642KV18-333BZXC provides an alternative 144-Mbit QDR II+ solution with similar electrical characteristics.