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CY7C1645KV18-400BZXI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 144MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for CY7C1645KV18-400BZXI
- Description：IC SRAM 144MBIT PAR 165FBGA
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, QDR II+
- Memory Size：144Mbit
- Memory Organization：4M x 36
- Memory Interface：Parallel
- Clock Frequency：400 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：1.7V ~ 1.9V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：165-LBGA
- Supplier Device Package：165-FBGA (15x17)
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for CY7C1645KV18-400BZXI
Memory IC Overview
The CY7C1645KV18-400BZXI is a QDR-II+ synchronous static random-access memory (SRAM) manufactured by Infineon Technologies. It features a total storage capacity of 144 Mbit, organized as 4M x 36 bits. The device supports a maximum clock frequency of 400 MHz and operates within a supply voltage range of 1.7 V to 1.9 V. Designed for industrial applications, it functions reliably across a temperature range of -40°C to +85°C. The component utilizes a parallel interface and is housed in a 165-ball FBGA package measuring 15x17 mm.
Memory IC Feature Summary
- Implements Quad Data Rate II Plus (QDR-II+) architecture for high-speed data transfer
- Provides 144 Mbit density with a 36-bit data width configuration
- Operates on a single 1.8V power supply rail
Memory IC Applications
- High-performance networking equipment
- Telecommunications infrastructure systems
- Industrial control processing units
Memory IC Procurement Notes
Verify the specific suffix BZXI against official Infineon documentation to confirm the exact package type and material specifications. Ensure that the industrial temperature grade (-40°C to +85°C) aligns with your system's environmental requirements. Cross-reference the 165-FBGA footprint dimensions with your PCB layout constraints before finalizing procurement decisions.
Memory IC Selection Notes
Select this component when a 144 Mbit capacity and 400 MHz throughput are required for synchronous memory operations. The 36-bit data bus width suits wide-bus architectures common in networking and telecom applications. Confirm compatibility with existing board designs regarding the 165-ball FBGA form factor and the specified 1.7V to 1.9V operating voltage range.
Memory IC Part Context
This part belongs to the CY7C1645KV18 family of QDR-II+ SRAMs from Infineon Technologies. These devices are engineered for demanding applications requiring low latency and high bandwidth. The family shares architectural similarities but varies in density and speed grades. This specific model represents the 4M x 36 configuration optimized for industrial environments.
Memory IC Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Generic cross-references may not match the specific electrical characteristics or pinout configurations of this QDR-II+ device.
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