CY7C2168KV18-450BZC

Memory IC Overview

The CY7C2168KV18-450BZC is an 18-Mbit synchronous pipelined SRAM featuring DDR II+ architecture. It offers a 1M x 18 organization and supports clock frequencies up to 450 MHz, with data transfer rates reaching 900 MHz. The device operates with a core voltage of 1.8 V ± 0.1 V and I/O voltages ranging from 1.4 V to 1.8 V. It utilizes a 165-ball FBGA package (13 × 15 mm) and includes on-die termination, echo clocks, and a valid data indicator for high-speed system integration.

Memory IC Feature Summary

• DDR II+ architecture with two-word burst capability and 2.5 cycle read latency
• Integrated on-die termination for data, byte write select, and input clocks
• Echo clocks and valid data indicator simplify high-speed data capture
• Programmable output impedance via ZQ pin for precise signal integrity

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure systems
• Industrial automation controllers
• Test and measurement instruments

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required operational frequency, as the base part number may support multiple speeds. Confirm RoHS compliance status, as Cypress/Infineon offers both lead-free and non-lead-free variants within this series. Ensure the procurement channel provides original manufacturer documentation to validate the component's authenticity and revision level against the official datasheet.

Memory IC Selection Notes

Select this component for applications requiring high throughput with low latency. The DDR II+ interface reduces address bus frequency compared to QDR devices. Consider the available I/O voltage range when designing power supplies. Verify that the system design accommodates the required external resistor for impedance matching and on-die termination configuration during initialization.

Memory IC Part Context

This device belongs to the CY7C2168KV18 family of 18-Mbit DDR II+ SRAMs. It shares architectural similarities with the CY7C2170KV18 but differs in data width organization. The series is designed for high-performance memory buffering where data rate and access time are critical constraints for system efficiency.

Memory IC Replacement Considerations

CY7C2170KV18-450BZC: Offers 512K x 36 organization instead of 1M x 18. Requires verification of pin compatibility and board layout adjustments due to different data width and array structure.