Memory IC CY7C2563XV18-633BZXC product image

CY7C2563XV18-633BZXC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:8fb184917bce Category: Brand:

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CY7C2563XV18-633BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C2563XV18-633BZXC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II+
  • Memory Size:72Mbit
  • Memory Organization:4M x 18
  • Memory Interface:Parallel
  • Clock Frequency:633 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C2563XV18-633BZXC

CY7C2563XV18-633BZXC

Memory IC Overview

The CY7C2563XV18 is a 72-Mbit QDR II+ Xtreme Synchronous Pipelined SRAM organized as 4M x 18. It supports a maximum operating frequency of 633 MHz with double data rate interfaces on both read and write ports, transferring data at 1266 MHz. The device features a four-word burst architecture with 2.5 cycle read latency when DOFF is asserted HIGH. It operates with a core voltage of 1.8 V ± 0.1 V and an I/O voltage range of 1.4 V to 1.6 V. The component utilizes a 165-ball FBGA package.

Memory IC Feature Summary

  • Supports concurrent independent read and write transactions using separate data ports to eliminate bus turnaround
  • Integrates On-Die Termination (ODT) for data inputs, byte write selects, and input clocks to reduce external components
  • Includes echo clocks (CQ/CQ) and a valid data indicator (QVLD) to simplify high-speed system timing
  • Features programmable output impedance via ZQ pin and internal PLL for accurate data placement

Memory IC Applications

  • High-bandwidth networking equipment requiring low-latency memory access
  • Telecommunications infrastructure systems utilizing synchronous pipelined architectures
  • Data routing applications necessitating full data coherency and concurrent port operations

Memory IC Procurement Notes

Verify the specific speed grade matches the required 633 MHz operational frequency. Confirm that the I/O supply voltage requirements align with the 1.4 V to 1.6 V specification. Ensure the design accommodates the 165-ball FBGA package dimensions. Check for any necessary external termination resistors for the ODT configuration if not integrated correctly.

Memory IC Selection Notes

Select this model for designs requiring a 4M x 18 organization with high-speed parallel interfaces. Consider the 2.5 cycle latency for standard operation or one-cycle latency if DOFF is utilized. Evaluate the power consumption against the 1.8 V core and 1.5 V I/O supply constraints. Ensure compatibility with HSTL input/output buffer standards for signal integrity.

Memory IC Part Context

This component belongs to the QDR II+ Xtreme family of synchronous SRAMs. It shares architectural similarities with other devices in the series but offers specific density and speed characteristics. The technology leverages advanced CMOS processes to achieve high bandwidth while maintaining low power consumption relative to performance levels.

Memory IC Replacement Considerations

CY7C2565XV18 serves as a width-compatible alternative within the same datasheet offering a 2M x 36 organization.

CY7C2563XV18-633BZXCCY7C2563XV18-633BZXC

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